參數(shù)資料
型號(hào)： NAND01GR4B2CZA1E
廠商： STMICROELECTRONICS
元件分類(lèi)： PROM
英文描述： 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
封裝： 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63
文件頁(yè)數(shù)： 26/64頁(yè)
文件大?。?/td> 632K
代理商： NAND01GR4B2CZA1E
Device operations
NAND01G-B, NAND02G-B
32/64
6.6
Block Erase
Erase operations are done one block at a time. An erase operation sets all of the bits in the
addressed block to ‘1’. All previous data in the block is lost.
An erase operation consists of three steps (refer to Figure 15):
1.
One bus cycle is required to setup the Block Erase command. Only addresses A18-
A28 (x8) or A17-A27 (x16) are used, the other address inputs are ignored.
2.
two or three bus cycles are then required to load the address of the block to be erased.
Refer to Table 8 and Table 9 for the block addresses of each device.
3.
one bus cycle is required to issue the Block Erase confirm command to start the P/E/R
Controller.
The operation is initiated on the rising edge of write Enable, W, after the confirm command
is issued. The P/E/R Controller handles Block Erase and implements the verify process.
During the Block Erase operation, only the Read Status Register and Reset commands will
be accepted, all other commands will be ignored.
Once the program operation has completed the P/E/R Controller bit SR6 is set to ‘1’ and the
Ready/Busy signal goes High. If the operation completed successfully, the Write Status Bit
SR0 is ‘0’, otherwise it is set to ‘1’.
Figure 15.
Block Erase Operation
6.7
Reset
The Reset command is used to reset the Command Interface and Status Register. If the
Reset command is issued during any operation, the operation will be aborted. If it was a
program or erase operation that was aborted, the contents of the memory locations being
modified will no longer be valid as the data will be partially programmed or erased.
If the device has already been reset then the new Reset command will not be accepted.
The Ready/Busy signal goes Low for tBLBH4 after the Reset command is issued. The value
of tBLBH4 depends on the operation that the device was performing when the command was
issued, refer to Table 25: AC Characteristics for Operations for the values.
I/O
RB
Block Address
Inputs
SR0
ai07593
D0h
70h
60h
Block Erase
Setup Code
Confirm
Code
Read Status Register
Busy
tBLBH3
(Erase Busy time)
相關(guān)PDF資料
PDF描述
NAND01GW3A0BZB1 128M X 8 FLASH 3V PROM, 35 ns, PBGA63
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND01GR4B2CZA1F 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2CZA6 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2CZA6E 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2CZA6F 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2CZB1 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
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