參數(shù)資料
型號(hào)： NAND01GR4B2CZA1E
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
封裝： 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63
文件頁(yè)數(shù)： 16/64頁(yè)
文件大?。?/td> 632K
代理商： NAND01GR4B2CZA1E
NAND01G-B, NAND02G-B
Device operations
23/64
6
Device operations
The following section gives the details of the device operations.
6.1
Read Memory Array
At Power-Up the device defaults to Read mode. To enter Read mode from another mode the
Read command must be issued, see Table 10: Commands. Once a Read command is
issued, subsequent consecutive Read commands only require the confirm command code
(30h).
Once a Read command is issued two types of operations are available: Random Read and
Page Read.
6.1.1
Random Read
Each time the Read command is issued the first read is Random Read.
6.1.2
Page Read
After the first Random Read access, the page data (2112 Bytes or 1056 Words) is
transferred to the Page Buffer in a time of tWHBH (refer to Table 25 for value). Once the
transfer is complete the Ready/Busy signal goes High. The data can then be read out
sequentially (from selected column address to last column address) by pulsing the Read
Enable signal.
The device can output random data in a page, instead of the consecutive sequential data, by
issuing a Random Data Output command.
The Random Data Output command can be used to skip some data during a sequential
data output.
The sequential operation can be resumed by changing the column address of the next data
to be output, to the address which follows the Random Data Output command.
The Random Data Output command can be issued as many times as required within a
page.
The Random Data Output command is not accepted during Cache Read operations.
相關(guān)PDF資料
PDF描述
NAND01GW3A0BZB1 128M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND512R4A2CZB6E 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND512R4A0BZA6 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
NAND512R4A0BZB6 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND512R4A0CZA6T 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND01GR4B2CZA1F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2CZA6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2CZA6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2CZA6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2CZB1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
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