參數(shù)資料
型號(hào)： NAND01GR4B2CZA1E
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
封裝： 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63
文件頁(yè)數(shù)： 30/64頁(yè)
文件大?。?/td> 632K
代理商： NAND01GR4B2CZA1E
Data protection
NAND01G-B, NAND02G-B
36/64
7
Data protection
The device has both hardware and software features to protect against program and erase
operations.
It features a Write Protect, WP, pin, which can be used to protect the device against program
and erase operations. It is recommended to keep WP at VIL during power-up and power-
down.
In addition, to protect the memory from any involuntary program/erase operations during
power-transitions, the device has an internal voltage detector which disables all functions
whenever VDD is below VLKO (see Table 22 and Table 23).
The device features a Block Lock mode, which is enabled by setting the Power-Up Read
Enable, Lock/Unlock Enable, PRL, signal to High.
The Block Lock mode has two levels of software protection.
●
Blocks Lock/Unlock
●
Blocks Lock-down
Refer to Figure 18 for an overview of the protection mechanism.
7.1
Blocks Lock
All the blocks are locked simultaneously by issuing a Blocks Lock command (see Table 10:
All blocks are locked after power-up and when the Write Protect signal is Low.
Once all the blocks are locked, one sequence of consecutive blocks can be unlocked by
using the Blocks Unlock command.
Refer to Figure 23: Command Latch AC Waveforms for details on how to issue the
command.
7.2
Blocks Unlock
A sequence of consecutive locked blocks can be unlocked, to allow program or erase
operations, by issuing an Blocks Unlock command (see Table 10: Commands).
The Blocks Unlock command consists of four steps:
1.
One bus cycle to setup the command
2.
two or three bus cycles to give the Start Block Address (refer to Table 8, Table 9 and
3.
one bus cycle to confirm the command
4.
two or three bus cycles to give the End Block Address (refer to Table 8, Table 9 and
The Start Block Address must be nearer the logical LSB (Least Significant Bit) than End
Block Address.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND01GR4B2CZA1F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2CZA6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2CZA6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2CZA6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2CZB1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
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