參數(shù)資料
型號(hào): HYB25R144180C
廠商: SIEMENS AG
英文描述: 144-Mbit direct RDRAM(144 Mbit 直接 RDRAM)
中文描述: 144兆位的直接的RDRAM(144兆直接的RDRAM)
文件頁數(shù): 89/93頁
文件大小: 919K
代理商: HYB25R144180C
Data Book
89
2.00
Direct RDRAM
128/144-MBit (256K
×
16/18
×
32s)
controller
A logic-device which drives the ROW/COL /DQ wires for a Channel of
RDRAMs.
Column opcode field in COLC packet.
The banks and sense amps of an RDRAM.
Clock pins for transmitting packets.
Periodic operations to update the proper
I
OL
value of RSL output drivers.
Write data packet on DQ pins.
CNFGB register field - doubled-bank.
Device address field in COLC packet.
An RDRAM on a Channel.
Control register with device address that is matched against DR, DC, and DX
fields.
Device match for ROW packet decode.
RDRAM with shared sense amp.
DQA and DQB pins.
Pins for data byte A.
Pins for data byte B.
NAPX register field - PDN/NAP exit.
Device address field and packet framing fields in ROWA and ROWR packets.
16 bytes - the smallest addressable datum.
Device address field in COLX packet.
A collection of bits in a packet.
Control register with initialization fields.
Configuring a Channel of RDRAMs so they are ready to respond to
transactions.
CNFGA register field - low-power self-refresh.
Mask opcode field (COLM/COLX packet).
Field in COLM packet for masking byte A.
Field in COLM packet for masking byte B.
Mask command in M field.
Control register - manufacturer ID.
Power state - needs SCK/CMD wakeup.
Nap command in ROP field.
Conditional nap command in ROP field.
NAPX register field - NAP exit delay A.
NAPX register field - NAP exit delay B.
No-operation command in COP field.
COP
core
CTM,CTMN
current control
D
DBL
DC
device
DEVID
DM
doubled-bank
DQ
DQA
DQB
DQS
DR,DR4T,DR4F
dualoct
DX
field
INIT
initialization
LSR
M
MA
MB
MSK
MVER
NAP
NAPR
NAPRC
NAPXA
NAPXB
NOCOP
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