參數(shù)資料
型號: GM72V66841Exx
廠商: Hynix Semiconductor Inc.
英文描述: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述: 2097152字× 8位× 4個銀行同步動態(tài)RAM
文件頁數(shù): 52/57頁
文件大?。?/td> 592K
代理商: GM72V66841EXX
LG Semicon
Auto Refresh Cycle
GM72V66841CT/CLT
CS
RAS
CAS
WE
A12/A13
Address
DQ (output)
C:a
A10=h
a
a+1
Precharge
if needed
Auto Refresh
R:a
Bank0
Read
Bank0
Active
Auto Refresh
19
20
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
CLK
CKE
V
IH
t
RP
t
RC
t
RC
Refresh Cycle and
Read Cycle
RAS-CAS Delay=2
CAS Latency=2
Burst Length=4
= VIH or VIL
High-Z
51
DQM ,
DQMU/DQML
DQ (input)
相關PDF資料
PDF描述
GM72V66841ELT-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-75 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7K 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM7630 FIXED MULTI - OUTPUT REGULATOR
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