參數(shù)資料
型號: GM72V66841Exx
廠商: Hynix Semiconductor Inc.
英文描述: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述: 2097152字× 8位× 4個銀行同步動態(tài)RAM
文件頁數(shù): 23/57頁
文件大?。?/td> 592K
代理商: GM72V66841EXX
LG Semicon
GM72V66841CT/CLT
Full-page Burst Stop
Burst stop command during burst read:
The
burst stop (BST) command is used to stop data
output during a full-page burst. The BST
command sets the output buffer to High-Z and
stops the full-page burst read.
The timing from command input to the last data
changes depending on the CAS latency setting. In
addition, the BST command is valid only during
full-page burst mode, and is invalid with burst
lengths 1, 2, 4, and 8.
BST to valid data
2
3
1
2
CAS Latency
BST to high impedance
2
3
BST
CLK
DQ(output)
out
out
out
out
Command
l
BSR
= 1
cycle
CAS Latency=2, Burst Length = full page
out
l
BSH
= 2 cycle
out
22
BST
CLK
DQ(output)
out
out
out
out
Command
CAS Latency = 3, Burst Length = full page
out
l
BSR
= 2
cycle
l
BSH
= 3 cycle
out
out
相關(guān)PDF資料
PDF描述
GM72V66841ELT-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-75 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7K 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
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