參數(shù)資料
型號: GM72V66841Exx
廠商: Hynix Semiconductor Inc.
英文描述: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述: 2097152字× 8位× 4個銀行同步動態(tài)RAM
文件頁數(shù): 7/57頁
文件大?。?/td> 592K
代理商: GM72V66841EXX
LG Semicon
GM72V66841CT/CLT
6
DQM Truth Table
Function
Write enable/output enable
Write inhibit/output disable
Symbol
ENB
MASK
n-1
CKE
DQM
n
H
H
X
X
L
H
The GM72V66841CT/CLT can mask input/output
data by means of DQM.
During reading, the output buffer is set to Low-Z
by setting DQM to Low, enabling data output. On
the other hand, when DQM is set to High, the
output buffer becomes High-Z, disabling data
output.
During writing, data is written by setting DQM to
Low. When DQM is set to High, the previous
data is held (the new data is not written). Desired
data can be masked during burst read or burst
write by setting DQM. For details, refer to the
DQM
control
GM72V66841CT/CLT operating instructions.
section
of
the
* Notes : H: V
IH
, L: V
IL
, X: V
IH
or V
IL
.
Write : l
DID
is needed.
Read : l
DOD
is needed.
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