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參數(shù)資料
| 型號(hào)： | GM72V66841Exx |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 2097152字× 8位× 4個(gè)銀行同步動(dòng)態(tài)RAM |
| 文件頁(yè)數(shù)： | 33/57頁(yè) |
| 文件大?。?/td> | 592K |
| 代理商： | GM72V66841EXX |
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LG Semicon
GM72V66841CT/CLT
Write Command to Precharge Command
Interval (same bank):
When the Precharge
command is executed for the same bank as the
write command that preceded it, the minimum
interval between the two commands is 1 cycle.
However, if the burst write operation is
unfinished, the input data must be masked by
means of DQM, DQMU/DQML for assurance of
the cycle defined by
t
RWL
.
Burst Length = 4 ( To stop write operation)
32
Command
DQM,
DQMU/DQML
Din
t
RWL
WRIT
PRE/PALL
CLK
in A0
in A1
t
RWL
PRE/PALL
WRIT
Command
DQM,
DQMU/DQML
Din
CLK
Burst Length = 4 (To write all data)
CLK
Din
t
RWL
in A0
in A1
in A2
in A3
DQM,
DQMU/DQML
WRIT
PRE/PALL
Command
相關(guān)PDF資料 |
PDF描述 |
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| GM72V66841ELT-7 | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ELT-75 | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ET-7 | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ET-7K | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
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| GM7500 | 制造商:GAMMA 制造商全稱:GAMMA 功能描述:PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
| GM7500D16T | 制造商:GAMMA 制造商全稱:GAMMA 功能描述:PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
| GM7500S16R | 制造商:GAMMA 制造商全稱:GAMMA 功能描述:PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
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