參數(shù)資料
型號: GM72V66841Exx
廠商: Hynix Semiconductor Inc.
英文描述: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述: 2097152字× 8位× 4個銀行同步動態(tài)RAM
文件頁數(shù): 44/57頁
文件大?。?/td> 592K
代理商: GM72V66841EXX
LG Semicon
GM72V66841CT/CLT
43
Relationship Between Frequency and Minimum Latency
Symbol
Notes
- 8
- 10K
l
BSR
l
BSR
l
BSH
l
BSH
l
BSW
Burst stop to
output valid
data hold
Burst stop to
output high
impedance
Burst stop to write data ignore
(CL=2)
(CL=3)
(CL=2)
(CL=3)
Notes :1.
l
RCD
to
l
RRD
are recommended value.
125
8
83
12
-
1
2
2
-
2
100
10
66
15
-
1
2
2
-
2
3
3
0
0
3
3
0
0
Parameter
t
CK
(ns)
frequency(MHz)
100
10
1
2
2
3
0
- 7K
- 7J
100
10
66
15
-
1
2
2
-
2
3
3
0
0
相關(guān)PDF資料
PDF描述
GM72V66841ELT-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-75 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7K 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
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