參數(shù)資料
型號(hào): GM72V66841Exx
廠商: Hynix Semiconductor Inc.
英文描述: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述: 2097152字× 8位× 4個(gè)銀行同步動(dòng)態(tài)RAM
文件頁(yè)數(shù): 48/57頁(yè)
文件大?。?/td> 592K
代理商: GM72V66841EXX
LG Semicon
Read Cycle/ Write Cycle
GM72V66841CT/CLT
CLK
CKE
CS
RAS
CAS
WE
A12/A13
Address
DQ(output)
b
b+3
b
b+1 b+2
.
..
..
a+2 a+3
a
a+1
.
..
..
CKE
CS
RAS
CAS
WE
A12/A13
Address
DQ(input)
V
IH
b
a+2 a+3
a
a+1
b+3
b
b+1 b+2
.
..
..
.
..
..
Bank3
Write
Bank0
Precharge
Bank3
Write
Bank3
Write
Bank3
Precharge
Bank3
Active
Bank0
Active
Bank0
Write
V
IH
R:b
C:b
C:a
R:a
C:b
C:b.
R:b
C:b
C:a
R:a
C:b
C:b.
19
20
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Read Cycle
RAS-CAS Delay=3
CAS Latency=3
Burst Length=4
= VIH or VIL
Write Cycle
RAS-CAS Delay=3
CAS Latency=3
Burst Length=4
= VIH or VIL
Bank3
Active
Bank3
Read
Bank0
Active
Bank0
Read
Bank0
Precharge
Bank3
Read
Bank3
Read
Bank3
Precharge
47
DQM ,
DQMU/DQML
DQ(output)
DQM ,
DQMU/DQML
DQ(input)
High-Z
High-Z
相關(guān)PDF資料
PDF描述
GM72V66841ELT-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-75 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7K 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
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