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參數(shù)資料
| 型號： | GM72V66841Exx |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 2097152字× 8位× 4個銀行同步動態(tài)RAM |
| 文件頁數(shù)： | 21/57頁 |
| 文件大?。?/td> | 592K |
| 代理商： | GM72V66841EXX |
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LG Semicon
GM72V66841CT/CLT
Read with auto-Precharge:
In this operation,
since Precharge is automatically performed after
completing a read operation, a Precharge
command need not be executed after each read
operation.
The command executed for the same bank after
the execution of this command must be the bank
active (ACTV) command. In addition, an interval
defined by l
APR
is required before execution of the
next command.
Precharge start cycle
3
2
2 cycle before the final data is output
1 cycle before the final data is output
CAS Latency
Burst Read with Auto-Precharge
20
CLK
Note : Internal auto-Precharge starts at the timing indicated by " "
At CLK=50MHz (l
APR
changes depending on the operating frequency.)
CL=2
Command
CL=3
Command
READ
Dout
l
APR
out 0
out 2
out 1
out 3
ACTV
Dout
l
APR
out 0
out 1
out 2
out 3
READ
ACTV
Auto Precharge
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