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參數(shù)資料
| 型號(hào)： | GM72V66841Exx |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 2097152字× 8位× 4個(gè)銀行同步動(dòng)態(tài)RAM |
| 文件頁數(shù)： | 27/57頁 |
| 文件大?。?/td> | 592K |
| 代理商： | GM72V66841EXX |
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LG Semicon
GM72V66841CT/CLT
WRITE to WRITE Command Interval (same ROW address in same bank)
CLK
Command
Address
(A0-A11)
Din
Burst Write Mode
Burst Length = 4
Bank0
BS(A12/A13)
ACTV
WRIT
WRIT
in A0
in B0
in B1
in B2
in B3
Bank0
Active
Column=A
Write
Column=B
Write
Row
Column A
Column B
26
Command Intervals
Write command to Write command interval:
1. Same bank, same ROW address:
When another write command is executed at the
same ROW address of the same bank as the
preceding write command, the second write can
be performed after an interval of no less than 1
cycle.
In the case of burst writes, the second write
command has priority.
2. Same bank, different ROW address:
When the ROW address changes, consecutive
read commands cannot be executed; it is
necessary to separate the two write commands
with a Precharge command and a bank-active
command.
3. Different bank:
When the bank changes, the second write can be
performed after an interval of no less than 1
cycle, provided that the other bank is in the bank-
active state. In the case of burst write, the second
write command has priority.
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