參數(shù)資料
型號(hào): GM72V66841Exx
廠商: Hynix Semiconductor Inc.
英文描述: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述: 2097152字× 8位× 4個(gè)銀行同步動(dòng)態(tài)RAM
文件頁數(shù): 49/57頁
文件大?。?/td> 592K
代理商: GM72V66841EXX
LG Semicon
Read / Single Write Cycle
GM72V66841CT/CLT
Bank0
Active
Bank0
Precharge
CS
RAS
CAS
WE
A12/A13
Address
a
CS
RAS
CAS
WE
A12/A13
Address
DQ(input)
Bank0
Write
Bank0
Write
Bank0
Write
Bank0
Precharge
Bank3
Active
Bank0
Read
R:b
C:a
R:a
C:a
C:a
Bank3
Active
Bank0
Active
Bank0
Read
Bank0
Read
Bank0
Write
Bank3
Precharge
R:b
C:a
C:a
R:a
C:b C:c
c
a
b
CLK
CKE
19
20
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
CKE
V
IH
V
IH
a+2 a+3
a
a+1
a+2 a+3
a
a+1
a+3
a
a+1
Read/Single Write Cycle
RAS-CAS Delay=3
CAS Latency=3
Burst Length=4
= VIH or VIL
48
DQ(input)
DQ(output)
DQ(output)
DQM ,
DQMU/DQML
DQM ,
DQMU/DQML
相關(guān)PDF資料
PDF描述
GM72V66841ELT-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-75 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7K 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
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