參數(shù)資料
型號(hào)： GM72V66841Exx
廠商： Hynix Semiconductor Inc.
英文描述： 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述： 2097152字× 8位× 4個(gè)銀行同步動(dòng)態(tài)RAM
文件頁(yè)數(shù)： 22/57頁(yè)
文件大小： 592K
代理商： GM72V66841EXX
LG Semicon
GM72V66841CT/CLT
CLK
DQ(input)
in 0
in 1
in 2
in 3
Command
l
APW
Write with auto-Precharge:
In this operation,
since Precharge is automatically performed after
completing a burst write or single write
operation, a Precharge command need not be
executed after each write operation.
The command executed for the same bank after
the execution of this command must be the bank
active (ACTV) command. In addition, an interval
of l
APW
is required between the final valid data
input and input of the next command.
Burst Write (Burst Length = 4)
WRIT
ACTV
CLK
Command
WRIT
ACTV
Single Write
DQ(input)
in
l
APW
21
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