參數(shù)資料
型號(hào): GM72V66841Exx
廠商: Hynix Semiconductor Inc.
英文描述: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述: 2097152字× 8位× 4個(gè)銀行同步動(dòng)態(tài)RAM
文件頁(yè)數(shù): 30/57頁(yè)
文件大?。?/td> 592K
代理商: GM72V66841EXX
LG Semicon
GM72V66841CT/CLT
Write Command to Read Command Interval:
1.
Same bank, same Row address:
When the read
command is executed at the same ROW address of
the same bank as the preceding write command, the
write command can be performed after an interval
of no less than 1 cycle.
However, in the case of a burst write, data will
continue to be written until one cycle before the
read command is executed.
29
CLK
Command
WRITE to READ Command Interval (1)
Burst Write Mode
CAS Latency=2
Burst Length = 4
Bank0
WRIT
READ
Din
in A0
out B3
out B1
out B0
out B2
Dout
DQM,
DQMU/DQML
Column=A
Write
Column=B
Read
Column=B
Dout
CLK
Command
WRITE to READ Command Interval (2)
Burst Write Mode
CAS Latency=2
Burst Length = 4
Bank0
WRIT
Din
in A0
out B3
out B1
out B0
out B2
Dout
DQM,
DQMU/DQML
READ
Column=A
Write
Column=B
Read
Column=B
Dout
in A1
CAS Latency
CAS Latency
相關(guān)PDF資料
PDF描述
GM72V66841ELT-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-75 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7K 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM7630 FIXED MULTI - OUTPUT REGULATOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GM73V1892H16C 制造商:Hynix Semi 功能描述: 制造商:LGS 功能描述:73V1892H16C
GM74 制造商:3M Electronic Products Division 功能描述:Gasket sealing 50ml
GM7500 制造商:GAMMA 制造商全稱:GAMMA 功能描述:PULSE-WIDTH-MODULATION CONTROL CIRCUITS
GM7500D16T 制造商:GAMMA 制造商全稱:GAMMA 功能描述:PULSE-WIDTH-MODULATION CONTROL CIRCUITS
GM7500S16R 制造商:GAMMA 制造商全稱:GAMMA 功能描述:PULSE-WIDTH-MODULATION CONTROL CIRCUITS