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參數(shù)資料
| 型號： | W25Q16VSFIG |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 2M X 8 SPI BUS SERIAL EEPROM, PDSO16 |
| 封裝： | 0.300 INCH, GREEN, PLASTIC, SOIC-16 |
| 文件頁數(shù)： | 33/60頁 |
| 文件大?。?/td> | 1438K |
| 代理商： | W25Q16VSFIG |
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W25Q16V
Publication Release Date: October 7, 2009
- 39 -
Revision E
10.2.23 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC
Characteristics). The instruction is initiated by driving the /CS pin low and shifting the instruction code
“B9h” as shown in figure 23.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-
down instruction will not be executed. After /CS is driven high, the power-down state will entered within
the time duration of tDP (See AC Characteristics). While in the power-down state only the Release from
Power-down / Device ID instruction, which restores the device to normal operation, will be recognized.
All other instructions are ignored. This includes the Read Status Register instruction, which is always
available during normal operation. Ignoring all but one instruction makes the Power Down state a useful
condition for securing maximum write protection. The device always powers-up in the normal operation
with the standby current of ICC1.
Figure 23. Deep Power-down Instruction Sequence Diagram
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PDF描述 |
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| W25Q32DWZPIP | 256K X 16 SPI BUS SERIAL EEPROM, 7.5 ns, PDSO8 |
| W25Q80VZPIG | 1M X 8 SPI BUS SERIAL EEPROM, DSO8 |
| W25X16AVDAIZ | 2M X 8 FLASH 2.7V PROM, PDIP8 |
| W25X40AVSSIG | 512K X 8 FLASH 2.7V PROM, PDSO8 |
| W25X80AVDAIZ | 1M X 8 FLASH 2.7V PROM, PDIP8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25Q16VSSIG | 功能描述:IC FLASH 16MBIT 80MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| W25Q16VZPIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q20BW | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q20BWSNIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q20BWSNIP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
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