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參數(shù)資料
| 型號： | W25Q16VSFIG |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 2M X 8 SPI BUS SERIAL EEPROM, PDSO16 |
| 封裝： | 0.300 INCH, GREEN, PLASTIC, SOIC-16 |
| 文件頁數(shù)： | 28/60頁 |
| 文件大?。?/td> | 1438K |
| 代理商： | W25Q16VSFIG |
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W25Q16V
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10.2.17 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of
all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2). The
Sector Erase instruction sequence is shown in figure 17.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done
the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status
of the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (SEC, TB, BP2,
BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 17. Sector Erase Instruction Sequence Diagram
相關PDF資料 |
PDF描述 |
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| W25Q32DWZPIP | 256K X 16 SPI BUS SERIAL EEPROM, 7.5 ns, PDSO8 |
| W25Q80VZPIG | 1M X 8 SPI BUS SERIAL EEPROM, DSO8 |
| W25X16AVDAIZ | 2M X 8 FLASH 2.7V PROM, PDIP8 |
| W25X40AVSSIG | 512K X 8 FLASH 2.7V PROM, PDSO8 |
| W25X80AVDAIZ | 1M X 8 FLASH 2.7V PROM, PDIP8 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| W25Q16VSSIG | 功能描述:IC FLASH 16MBIT 80MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| W25Q16VZPIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q20BW | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q20BWSNIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q20BWSNIP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
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