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| 型號(hào)： | VG4632321AQ-7 |
| 廠商： | VANGUARD INTERNATIONAL SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 524,288x32x2-Bit CMOS Synchronous Graphic RAM |
| 中文描述： | 1M X 32 SYNCHRONOUS GRAPHICS RAM, 6 ns, PQFP100 |
| 封裝： | PLASTIC, QFP-100 |
| 文件頁(yè)數(shù)： | 74/81頁(yè) |
| 文件大?。?/td> | 1965K |
| 代理商： | VG4632321AQ-7 |
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Document:
Rev.1
Page 49
VIS
Preliminary
VG4632321A
524,288x32x2-Bit
CMOS Synchronous Graphic RAM
Figure 23. Random Row Read (lnterleaving Banks)
(Burst Length = 2, CAS Latency = 1)
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CK1
t
High
RBu
RAv
RBw
RBx
RAx
RBy
RAy
RBz
RAz
RBu
RAu
RBv
RAW
CBu
RAu
CAu
RBv
CBv
RAv
CAv
RBw
CBw
RAw
CAw
RBx
RAx
CBx
CAx
RBy
RAy
RBz
CBy
CAy
RAz
CBz
Bu0
Au0
Bu1
Au1
Bv0
Bw0
Bx0
By0
Bx1
Av0
Aw0
Ay0
Aw1
Ax0
Bv1
Av1
Bw1
Ax1
By1
Ay1
Bz0
RP
t
RP
t
RP
t
RP
t
RP
t
RP
t
RP
t
RP
t
RP
t
RP
t
Activate
Command
Bank B
Activate
Command
Bank A
With Auto
Precharge
Read
Bank B
Read
Bank A
With Auto
Precharge
Activate
Command
Bank B
Activate
Command
Bank A
Activate
Command
Bank B
Activate
Command
Bank A
Activate
Command
Bank B
Activate
Command
Bank A
Activate
Command
Bank A
Activate
Command
Bank B
Activate
Command
Bank A
Activate
Command
Bank B
Read
Bank B
With Auto
Precharge
Read
Bank B
With Auto
Precharge
Read
Bank B
With Auto
Precharge
Read
Bank B
With Auto
Precharge
Read
Bank B
With Auto
Precharge
Read
Bank A
With Auto
Precharge
Read
Bank A
With Auto
Precharge
Read
Bank A
With Auto
Precharge
Read
Bank A
With Auto
Precharge
Begin Auto
Precharge
Bank B
Begin Auto
Precharge
Bank A
Begin Auto
Precharge
Bank B
Begin Auto
Precharge
Bank B
Begin Auto
Precharge
Bank B
Begin Auto
Precharge
Bank B
Begin Auto
Precharge
Bank A
Begin Auto
Precharge
Bank A
Begin Auto
Precharge
Bank A
Begin Auto
Precharge
Bank A
BS
DQM
DQ
A9
A0 ~ A8
DSF
CLK
CKE
CS
RAS
CAS
WE
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