參數(shù)資料
型號(hào)： VG4632321AQ-7
廠商： VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
元件分類(lèi)： DRAM
英文描述： 524,288x32x2-Bit CMOS Synchronous Graphic RAM
中文描述： 1M X 32 SYNCHRONOUS GRAPHICS RAM, 6 ns, PQFP100
封裝： PLASTIC, QFP-100
文件頁(yè)數(shù)： 14/81頁(yè)
文件大小： 1965K
代理商： VG4632321AQ-7
Document:
Rev.1
Page 14
VIS
Preliminary
VG4632321A
524,288x32x2-Bit
CMOS Synchronous Graphic RAM
t
ck2
,DQ’s
10 Block Write and AutoPrecharge command
(RAS = “H” , CAS = “L” , WE = “H”, DSF = “H” , BS = Bank , A8 = “H” , A3-A7 = Column Address,
A9,A10 = Don’t care
DQ0-DQ31 = Column Mask)
The Block Write and AutoPrecharge command performs the precharge operation automatically after
the block write operation. Once this command is given, any subsequent command can not occur within a
time delay of {t
BPL
+ t
RP
(min.)}.
11 Mode Register Set command
(RAS = “L” , CAS = ”L”, WE = “L” , DSF = “L” , BS , A0-A10 = Register Data)
The mode register stores the data for controlling the various operating modes of SGRAM. The Mode
Register Set command programs the values of CAS latency. Addressing Mode and Burst Length in the
Mode register to make SGRAM useful for variety of different applications. The default values of the Mode
Register after power-up are undefined, therefore this command must be issued at the power-up
sequence. The state of pins A0-A10 and BS in the same cycle is the data written in the mode register.
One clock cycle is required to complete the write in the mode register (refer to the following figure ). The
mode register contents can be changed using the same command and the clock cycle requirements dur-
ing operation as long as both banks are in the idle state.
NOP
T0
T1
T2
T3
T4
T5
T6
CLK
NOP
NOP
COMMAND
DIN A
1
CAS latency = 1
t
ck1
,DQ’s
T7
T8
NOP
NOP
NOP
Write A
Auto Precharge
NOP
Bank A
Activate
DIN A
0
DIN A
1
DIN A
0
DIN A
1
DIN A
0
t
DAL
t
DAL
t
DAL
*
*
*
*
CAS latency = 2
t
DAL
= t
WR
+ t
RP
Burst Write with Auto-Precharge (Burst Length = 2, CAS Latency = 1, 2, 3)
Begin AutoPrecharge
Bank can be reactivated at completion of t
DAL
9 Write and AutoPrecharge command (refer to the following figure)
(RAS = “H” , CAS = “L” , WE = “L” , DSF=”L” , BS = Bank, A8 = ”H”, A0-A7 = Column Address,
A9,A10 = Don’t care
)
The Write and AutoPrecharge command performs the precharge operation automatically after
the write operation. Once this command is given, any subsequent command can not occur within a
time delay of {burst length + t
WR
+ t
RP
(min.)}. At full-page burst, only write operation is performed in
this command and the auto precharge function is ignored.
CAS latency = 3
t
ck3
,DQ’s
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