參數(shù)資料
型號: VG4632321AQ-7
廠商: VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 524,288x32x2-Bit CMOS Synchronous Graphic RAM
中文描述: 1M X 32 SYNCHRONOUS GRAPHICS RAM, 6 ns, PQFP100
封裝: PLASTIC, QFP-100
文件頁數(shù): 30/81頁
文件大?。?/td> 1965K
代理商: VG4632321AQ-7
Document:
Rev.1
Page 5
VIS
Preliminary
VG4632321A
524,288x32x2-Bit
CMOS Synchronous Graphic RAM
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19
Figure 5. Self Refresh Entry & Exit Cycle
CLK
CKE
CS
RAS
CAS
BS
A0 ~ A9
WE
DSF
DQM
Hi-Z
tIS
DQ
Self Refresh Enter
Hi-Z
Auto Refresh
Self Refresh Exit
* Note 1
* Note 2
* Note 4
tSRX
* Note 5
tPDE
* Note 7
tRC(min)
* Note 6
* Note 8
* Note 8
* Note 3
Note: To Enter SelfRefresh Mode
1. CS, RAS & CAS with CKE should be low at the same clock cycle.
2. After 1 clock cycle, all the inputs including the system clock can be don’t care except for CKE.
3. The device remains in SelfRefresh mode as long as CKE stays “l(fā)ow”.
Once the device enters SelfRefresh mode, Minimum t
RAS
is required before exit from SelfRefresh.
Note: To Exit SelfRefresh Mode
4. System clock restart and be stable before returning CKE high.
5. Enable CKE and CKE should be set high for minimum time of t
SRX
.
6 .CS starts from high.
7. Minimum t
RC
is required after CKE going high to complete SelfRefresh exit.
8. 1024 cycles of burst AutoRefresh is required before SelfRefresh entry and after SelfRefresh exit if the
system uses burst refresh.
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