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參數(shù)資料
| 型號： | VG4632321AQ-7 |
| 廠商： | VANGUARD INTERNATIONAL SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 524,288x32x2-Bit CMOS Synchronous Graphic RAM |
| 中文描述： | 1M X 32 SYNCHRONOUS GRAPHICS RAM, 6 ns, PQFP100 |
| 封裝： | PLASTIC, QFP-100 |
| 文件頁數(shù)： | 11/81頁 |
| 文件大?。?/td> | 1965K |
| 代理商： | VG4632321AQ-7 |
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Document:
Rev.1
Page 11
VIS
Preliminary
VG4632321A
524,288x32x2-Bit
CMOS Synchronous Graphic RAM
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND
WRITE A
NOP
NOP
NOP
NOP
READ B
NOP
NOP
NOP
DIN A
0
DIN A
0
DIN A
0
DOUT B
1
DOUT B
2
DOUT B
3
DOUT B
0
DOUT B
1
DOUT B
2
DOUT B
3
DOUT B
0
DOUT B
1
DOUT B
2
DOUT B
3
CAS latency = 1
t
CK1
,DQ’s
CAS latency = 2
t
CK2
,DQ’s
t
CK3
,DQ’s
CAS latency = 3
don’t care
don’t care
don’t care
Input data for the write is masked
Input data must be removed from DQ’s at least one clock
cycle before the Read data appears on the outputs to avoid
data contention
Write Interrupted by a Read (Burst Length = 4, CAS Latency = 1, 2, 3)
The BankPrecharge/PrechargeAll command that interrupts a write burst without auto pre-
charge function should be issued m cycles after the clock edge at which the last data-in element
is registered, where m equals t
WR
/t
CK
rounded up to the next whole number. In addition, the
DQM signals must be used to mask input data, starting with the clock edge following the last
data-in element and ending with the clock edge on which the BankPrecharge/PrechargeAll
command is entered (refer to the following figure).
NOP
CLK
DQ
DQM
WRITE
NOP
NOP
NOP
Precharge
Activate
COMMAND
BANK
COLn
BANK (S)
ROW
DIN
n
DIN
n+1
t
RP
ADDRESS
:don’t care
Write to Precharge
t
WR
When Burst-Read and Single-Write mode is selected , the write burst length is 1 regardless of the
read burst length (refer to Figures 21 and 22 in Timing Waveforms).
8 Block Write command
(RAS = “H” , CAS = “L” , WE = “L”, DSF = “H” , BS =Bank , A8 = “L” , A3-A7 = Column Address, DQ0-DQ31
= Column Mask)
The block writes are non-burst accesses that write to eight column locations simultaneously. A single
data value, which was previously loaded in the Color register, is written to the block of eight consecutive
column locations addressed by inputs A3-A7. The information on the DQs which is registered coincident with
the Block Write command is used to mask specific column/byte combinations within the block . The mapping
of the DQ inputs to the column/byte combinations is shown in following table.
T0 T1 T2 T3 T4 T5 T6
DOUT B
0
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| VG4632321A | CHASSIS PLATE; IP rating:IP67; Temp, op. max:100(degree C); Temp, op. min:-40(degree C) RoHS Compliant: Yes |
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| VG4632321AQ-7R | 制造商:VML 制造商全稱:VML 功能描述:524,288x32x2-Bit CMOS Synchronous Graphic RAM |
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