參數(shù)資料
型號: MT57W4MH9CF-6
元件分類: SRAM
英文描述: 4M X 9 DDR SRAM, 0.5 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, FBGA-165
文件頁數(shù): 26/29頁
文件大?。?/td> 344K
代理商: MT57W4MH9CF-6
4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36
1.8V VDD, HSTL, DDR SIO SRAM
ADVANCE
36Mb: 1.8V VDD, HSTL, QDRB2 SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT57W2MH18C_B.fm – Rev. B, Pub. 2/03
6
2003 Micron Technology, Inc.
Table 2:
4 Meg x 8 Ball Layout (Top View)
165-Ball FBGA
12
3
4
5
6
7
8
910
11
A
CQ#
VSS/SA1
SA
R/W#
NW1#2
K#
NC/SA3
LD#
SA
CQ
B
NC
SA
NC/SA4
K
NW0#5
SA
NC
Q3
C
NC
VSS
SA
VSS
NC
D3
D
NC
D4
NC
VSS
NC
E
NC
Q4
VDDQVSS
VSS
VDDQNC
D2
Q2
F
NC
D5
NC
VDDQVDD
VSS
VDD
VDDQNC
NC
G
NC
Q5
VDDQVDD
VSS
VDD
VDDQNC
NC
H
DLL#
VREF
VDDQVDDQVDD
VSS
VDD
VDDQVDDQVREF
ZQ
J
NC
VDDQVDD
VSS
VDD
VDDQNC
Q1
D1
K
NC
VDDQVDD
VSS
VDD
VDDQNC
NC
L
NC
Q6
D6
VDDQVSS
VSS
VDDQNC
NC
Q0
M
NC
VSS
NC
D0
N
NC
D7
NC
VSS
SA
VSS
NC
P
NC
Q7
SA
C
SA
NC
R
TDO
TCK
SA
C#
SA
TMS
TDI
NOTE:
1. Expansion address: 2A for 72Mb
2. NW1# controls writes to D4:D7
3. Expansion address: 7A for 144Mb
4. Expansion address: 5B for 288Mb
5. NW0# controls writes to D0:D3
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