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25. Flash Memory Version
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25. Flash Memory Version
Aside from the built-in flash memory, the flash memory version microcomputer has the same functions as the
masked ROM version.
In the flash memory version, rewrite operation to the flash memory can be performed in three modes: CPU
rewrite mode, standard serial I/O mode and parallel I/O mode.
Table 25.1 lists specifications of the flash memory version. See Tables 1.1 and 1.2 for the items not listed in
Table 25.1.
Table 25.1 Flash Memory Version Specifications
Item
Specification
Flash Memory Operating Mode
3 modes (CPU rewrite, standard serial I/O, parallel I/O)
Erase Block
User ROM Area
See Figure 25.1
Boot ROM Area
1 block (4 Kbytes)(1)
Program Method
Per word (16 bytes), per byte (8 bits)(2)
Erase Method
All block erase, erase per block
Program and Erase Control Method
Software commands control programming and erasing on the flash memory
Protect Method
The lock bit protects each block in the flash memory
Number of Commands
8 commands
Program and Erase Endurance
100 times(3)
Data Retention
10 years
ROM Code Protection
Standard serial I/O mode and parallel I/O mode supported
NOTES:
1. The rewrite control program for standard serial I/O mode is stored in the boot ROM area before ship-
ment. This space can be rewritten in parallel I/O mode only.
2. Programming per byte is available in parallel I/O mode only.
3. Program and erase endurance refers to the number of times a block erase can be performed. Every block
erase performed after writing data of one word or more counts as one program and erase operation.
Table 25.2 Flash Memory Rewrite Mode Overview
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