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參數(shù)資料
| 型號： | KBE00S009M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 |
| 中文描述： | 1Gb的NAND × 2 256Mb的移動SDRAM × 2 |
| 文件頁數(shù)： | 69/86頁 |
| 文件大?。?/td> | 1898K |
| 代理商： | KBE00S009M |
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MCP MEMORY
69
KBE00S009M-D411
Revision 1.0
May 2005
0
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High level is necessary
CKE
CS
RAS
CAS
ADDR
BA0
BA1
DQ
A10/AP
WE
Power Up Sequence for Mobile SDRAM
DQM
Precharge
(All Bank)
t
RP
16
17
18
19
20
21
22
24
23
25
≈
≈
Key
RAa
Hi-Z
Hi-Z
t
ARFC
t
ARFC
Auto
Refresh
Auto
Refresh
Normal
MRS
Extended
MRS
Row Active
(A-Bank)
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
*NOTE:
1. Apply power and attempt to maintain CKE at a high state and all other inputs may be undefined.
- Apply V
DD
before or at the same time as V
DDQ
.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
6. Issue a extended mode register set command to define DS or PASR operating type of the device after normal MRS.
EMRS cycle is not mandatory and the EMRS command needs to be issued only when DS or PASR is used.
The default state without EMRS command issued is the half driver strength and full array refreshed.
The device is now ready for the operation selected by EMRS.
For operating with DS or PASR , set DS or PASR mode in EMRS setting stage.
In order to adjust another mode in the state of DS or PASR mode, additional EMRS set is required but power up sequence is not needed again
at this time. In that case, all banks have to be in idle state prior to adjusting EMRS set.
: Don’t care
Key
CLOCK
Hi
≈
≈
≈
≈
≈
≈
≈
≈
RAa
≈
≈
≈
≈
≈
≈
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KBE00S009M-D411 | 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 |
| KBJ2501 | 25A SINGLE PHASE SILICON BRIDGE RECTIFIER |
| KBJ2502 | 25A SINGLE PHASE SILICON BRIDGE RECTIFIER |
| KBJ2503 | 25A SINGLE PHASE SILICON BRIDGE RECTIFIER |
| KBJ2504 | 25A SINGLE PHASE SILICON BRIDGE RECTIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KBE00S009M-D411 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 |
| KB-E100SRW | 功能描述:LED 顯示器和配件 Red 640nm 90mcd Diffused Light Bar RoHS:否 制造商:Avago Technologies 顯示器類型:7 Segment 數(shù)位數(shù)量:2 字符大小:7.8 mm x 14.22 mm 照明顏色:Red 波長:628 nm 共用管腳:Common Anode 工作電壓:2.05 V 工作電流:20 mA 最大工作溫度:+ 85 C 最小工作溫度:- 35 C 封裝:Tube |
| KB-E100SURKW | 功能描述:LED條和陣列 8.89X3.81MM RED LT BAR LED DISPLAY RoHS:否 制造商:Avago Technologies 產(chǎn)品:LED Light Bars 照明顏色:Red 光強度:45 mcd 封裝:Tube |
| KBE1A11N | 制造商:Lovato Electric Inc 功能描述: |
| KBEV 5T-0.5-RSSV 4.5T | 制造商:TURCK Inc 功能描述:KBEV 5T-0.5-RSSV 4.5T |
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