參數(shù)資料
型號(hào): KBE00S009M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
中文描述: 1Gb的NAND × 2 256Mb的移動(dòng)SDRAM × 2
文件頁(yè)數(shù): 11/86頁(yè)
文件大小: 1898K
代理商: KBE00S009M
MCP MEMORY
11
KBE00S009M-D411
Revision 1.0
May 2005
The device is arranged in eight 256Mbit memory planes. Each plane contains 2,048 blocks and 528 byte page registers. This allows
it to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is
configured so that multi-plane program/erase operations can be executed for every four sequential blocks by dividing the memory
array into plane 0~3 or plane 4~7 separately. For example, multi-plane program/erase operations into plane 2,3,4 and 5 are prohib-
ited.
Memory Map
Figure 3. Memory Array Map
Plane 0
Plane 1
(2048 Block)
Plane 2
(2048 Block)
Plane 3
(2048 Block)
(2048 Block)
Page 0
Page 1
Page 31
Page 30
Block 0
Page 0
Page 1
Page 31
Page 30
Block 1
Page 0
Page 1
Page 31
Page 30
Block 2
Page 0
Page 1
Page 31
Page 30
Block 3
Page 0
Page 1
Page 31
Page 30
Block 8188
Page 0
Page 1
Page 31
Page 30
Block 8189
Page 0
Page 1
Page 31
Page 30
Block 8190
Page 0
Page 1
Page 31
Page 30
Block 8191
Page 0
Page 1
Page 31
Page 30
Block 8192
Page 0
Page 1
Page 31
Page 30
Block 8193
Page 0
Page 1
Page 31
Page 30
Block 8194
Page 0
Page 1
Page 31
Page 30
Block 8195
Page 0
Page 1
Page 31
Page 30
Block 16380
Page 0
Page 1
Page 31
Page 30
Block 16381
Page 0
Page 1
Page 31
Page 30
Block 16382
Page 0
Page 1
Page 31
Page 30
Block 16383
528byte Page Registers
528byte Page Registers
528byte Page Registers
528byte Page Registers
528byte Page Registers
528byte Page Registers
528byte Page Registers
528byte Page Registers
Plane 4
(2048 Block)
Plane 5
(2048 Block)
Plane 6
(2048 Block)
Plane 7
(2048 Block)
相關(guān)PDF資料
PDF描述
KBE00S009M-D411 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBJ2501 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
KBJ2502 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
KBJ2503 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
KBJ2504 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KBE00S009M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KB-E100SRW 功能描述:LED 顯示器和配件 Red 640nm 90mcd Diffused Light Bar RoHS:否 制造商:Avago Technologies 顯示器類型:7 Segment 數(shù)位數(shù)量:2 字符大小:7.8 mm x 14.22 mm 照明顏色:Red 波長(zhǎng):628 nm 共用管腳:Common Anode 工作電壓:2.05 V 工作電流:20 mA 最大工作溫度:+ 85 C 最小工作溫度:- 35 C 封裝:Tube
KB-E100SURKW 功能描述:LED條和陣列 8.89X3.81MM RED LT BAR LED DISPLAY RoHS:否 制造商:Avago Technologies 產(chǎn)品:LED Light Bars 照明顏色:Red 光強(qiáng)度:45 mcd 封裝:Tube
KBE1A11N 制造商:Lovato Electric Inc 功能描述:
KBEV 5T-0.5-RSSV 4.5T 制造商:TURCK Inc 功能描述:KBEV 5T-0.5-RSSV 4.5T