參數(shù)資料
型號(hào): KBE00S009M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
中文描述: 1Gb的NAND × 2 256Mb的移動(dòng)SDRAM × 2
文件頁(yè)數(shù): 67/86頁(yè)
文件大小: 1898K
代理商: KBE00S009M
MCP MEMORY
67
KBE00S009M-D411
Revision 1.0
May 2005
FUNCTION TRUTH TABLE (TABLE 2)
Current
State
CKE
(n-1)
CKE
n
CS
RAS
CAS
WE
Address
Action
Note
Self
Refresh
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
H
H
H
H
H
H
H
L
H
H
L
L
X
H
H
H
H
H
L
X
H
H
H
H
H
L
H
L
L
L
L
L
L
L
L
H
L
H
L
X
H
L
L
L
L
X
X
H
L
L
L
L
X
X
H
L
L
L
L
L
L
X
X
X
X
X
X
X
H
H
H
L
X
X
X
H
H
H
L
X
X
X
H
H
H
L
L
L
X
X
X
X
X
X
X
H
H
L
X
X
X
X
H
H
L
X
X
X
X
H
H
L
H
L
L
X
X
X
X
X
X
X
H
L
X
X
X
X
X
H
L
X
X
X
X
X
H
L
X
H
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Exit Self Refresh --> Idle after ts
RFX
(ABI)
Exit Self Refresh --> Idle after ts
RFX
(ABI)
Exit Self Refresh --> Idle after ts
RFX
(ABI)
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Maintain Self Refresh)
INVALID
Exit Power Down --> ABI
Exit Power Down --> ABI
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Maintain Low Power Mode)
Refer to Table 1
Enter Power Down
Enter Power Down
ILLEGAL
ILLEGAL
Row (& Bank) Active
Enter Self Refresh
OP Code Mode Register Access
X
NOP
X
Refer to Operations in Table 1
X
Begin Clock Suspend next cycle
X
Exit Clock Suspend next cycle
X
Maintain Clock Suspend
6
6
All
Banks
Precharge
Power
Down
7
7
All
Banks
Idle
8
8
RA
X
8
Any State
other than
Listed
above
9
9
*NOTE:
6. CKE low to high transition is asynchronous.
7. CKE low to high transition is asynchronous if restarts internal clock.
A minimum setup time 1CLK + t
SS
must be satisfied before any command other than exit.
8. Power down and self refresh can be entered only from the all banks idle state.
9. Must be a legal command.
Abbreviations : ABI = All Banks Idle, RA = Row Address
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