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參數(shù)資料
| 型號(hào)： | KBE00S009M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 |
| 中文描述： | 1Gb的NAND × 2 256Mb的移動(dòng)SDRAM × 2 |
| 文件頁(yè)數(shù)： | 53/86頁(yè) |
| 文件大?。?/td> | 1898K |
| 代理商： | KBE00S009M |
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MCP MEMORY
53
KBE00S009M-D411
Revision 1.0
May 2005
D. DEVICE OPERATIONS
BANK ADDRESSES (BA0 ~ BA1)
This SDRAM is organized as four independent banks of
4,194,304 words x 32 bits memory arrays. The BA0 ~ BA1 inputs
are latched at the time of assertion of RAS and CAS to select the
bank to be used for the operation. The bank addresses BA0 ~
BA1 are latched at bank active, read, write, mode register set
and precharge operations.
ADDRESS INPUTS (A0 ~ A12)
The 22 address bits are required to decode the 8,388,608 word
locations are multiplexed into 13 address input pins (A0 ~ A12).
The 13 bit row addresses are latched along with RAS and BA0 ~
BA1 during bank activate command. The 9 bit column addresses
are latched along with CAS, WE and BA0 ~ BA1 during read or
write command.
ADDRESSES of 512Mb
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KBE00S009M-D411 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 |
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