參數(shù)資料
型號: KBE00S009M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
中文描述: 1Gb的NAND × 2 256Mb的移動SDRAM × 2
文件頁數(shù): 2/86頁
文件大?。?/td> 1898K
代理商: KBE00S009M
MCP MEMORY
2
KBE00S009M-D411
Revision 1.0
May 2005
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
1.0
Remark
Preliminary
Final
History
Initial issue.
- 2Gb NAND DDP M-Die_ Ver 0.0
- 512Mb M-SDR DDP F-Die_Ver 1.0
<Common>
- Changed operating voltage : page 3
<NAND Flash> .... Ver 0.2
- Changed the technical note : page 15,16
- Finalize
Draft Date
March 27, 2005
May 27, 2005
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s web site.
http://samsungelectronics.com/semiconductors/products/products_index.html
Document Title
Multi-Chip Package MEMORY
1G Bit (128Mx8) Nand Flash*2 / 256M Bit
(4Mx16x4Banks) Mobile SDRAM*2
相關PDF資料
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KBE00S009M-D411 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
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