參數(shù)資料
型號(hào)： HYB39S64800
廠商： SIEMENS AG
英文描述： 64 MBit Synchronous DRAM
中文描述： 64兆位同步DRAM
文件頁(yè)數(shù)： 8/53頁(yè)
文件大?。?/td> 665K
代理商： HYB39S64800
Semiconductor Group
8
HYB39S64400/800/160AT(L)
64MBit Synchronous DRAM
Operation Definition
All of SDRAM operations are defined by states of control signals CS, RAS, CAS, WE, and DQM at
the positive edge of the clock. The following list shows the truth table for the operation commands.
Note:
1. V = Valid, x = Don’t Care, L = Low Level, H = High Level
2. CKEn signal is input level when commands are provided, CKEn-1 signal is input level one clock before
the commands are provided.
3. This is the state of the banks designated by BS0, BS1 signals.
4. Device state is Full Page Burst operation
5. Power Down Mode can not entry in the burst cycle. When this command assert in the burst mode cycle
device is clock suspend mode.
Operation
Device
State
Idle
3
Active
3
Active
3
CKE
n-1
CKE
n
CS
RAS
CAS
WE
DQM A0-9,
A11
A10
BS0
BS1
Row Activate (ACT)
H
X
L
L
H
H
X
V
V
V
Read (READ)
H
X
L
H
L
H
X
V
L
V
Read w/ Autoprecharge
(READA)
H
X
L
H
L
H
X
V
H
V
Write (WRITE)
Active
3
Active
3
H
X
L
H
L
L
X
V
L
V
Write w/ Autoprecharge
(WRITEA)
H
X
L
H
L
L
X
V
H
V
Row Precharge (PRE)
Any
H
X
L
L
H
L
X
X
L
V
Precharge All (PREA)
Any
H
X
L
L
H
L
X
X
H
X
Mode Register Set (MRS)
Idle
H
X
L
L
L
L
X
V
V
V
No Operation (NOP)
Any
H
X
L
H
H
H
X
X
X
X
Device Deselect (INHBT)
Any
H
X
H
X
X
X
X
X
X
X
Auto Refresh (REFA)
Idle
H
H
L
L
L
H
X
X
X
X
Self Refresh Entry (REFS-EN)
Idle
H
L
L
L
L
H
X
X
X
X
Self Refresh Exit (REFS-EX)
Idle
(Self
Refr.)
L
H
H
X
X
X
X
X
X
X
L
H
H
X
Power Down Entry (PDN-EN)
Idle
Active
5
H
L
H
X
X
X
X
X
X
X
L
H
H
X
Power Down Exit (PDN-EX)
Any
(Power
Down)
L
H
H
X
X
X
X
X
X
X
L
H
H
L
Data Write/Output Enable
Active
H
X
X
X
X
X
L
X
X
X
Data Write/Output Disable
Active
H
X
X
X
X
X
H
X
X
X
相關(guān)PDF資料
PDF描述
HYB41256 Wirewound Inductor; Inductor Type:Standard; Inductance:10nH; Inductance Tolerance:+/- 5 %; Current Rating:400mA; Series:CM160808; Package/Case:0603; Core Material:Alumina Ceramic; Leaded Process Compatible:No RoHS Compliant: No
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB39S64800AT-10 制造商:Siemens 功能描述:8M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
HYB39S64800AT-7 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 SDRAM
HYB39S64800AT-7.5 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 SDRAM
HYB39S64800AT-8 制造商:Infineon Technologies AG 功能描述:
HYB39S64800AT-8B 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:64 MBit Synchronous DRAM
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