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參數(shù)資料
| 型號： | HYB39S64800 |
| 廠商： | SIEMENS AG |
| 英文描述： | 64 MBit Synchronous DRAM |
| 中文描述： | 64兆位同步DRAM |
| 文件頁數(shù)： | 15/53頁 |
| 文件大?。?/td> | 665K |
| 代理商： | HYB39S64800 |
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Semiconductor Group
15
HYB39S64400/800/160AT(L)
64MBit Synchronous DRAM
Operating Currents
(T
A
= 0 to 70
o
C, Vdd = 3.3V
±
0.3V
(Recommended Operating Conditions unless otherwise noted)
Notes:
3. These parameters depend on the cycle rate. These values are measured at 100 MHz for -8
and at 66 MHz for -10 parts. Input signals are changed once during tck, excepts for ICC6 and for standby
currents when tck=infinity.
4. These parameters are measured with continuous data stream during read access and all DQ toggling. CL=3
and BL=4 is assumed and the VDDQ current is excluded.
Parameter & Test Condition
Symb.
-8/-8B
-10
Note
max.
OPERATING CURRENT
trc=trcmin., tck=tckmin.
Ouputs open, Burst Length = 4, CL=3
All banks operated in random access,
all banks operated in ping-pong manner
to maximize gapless data access
ICC1
x4
x8
x16
100
110
130
70
75
90
mA
mA
mA
3
PRECHARGE STANDBY CURRENT in
Power Down Mode
CS =VIH (min.), CKE<=Vil(max)
tck = min.
ICC2P
2
2
mA
3
tck = Infinity
ICC2PS
1
1
mA
3
PRECHARGE STANDBY CURRENT in
Non-Power Down Mode
CS = VIH (min.), CKE>=Vih(min)
tck = min.
ICC2N
35
30
mA
3
tck = Infinity
ICC2NS
5
5
mA
3
NO OPERATING CURRENT
tck = min., CS = VIH(min),
active state ( max. 4 banks)
CKE>=VIH(min.)
ICC3N
45
40
mA
3
CKE<=VIL(max.)
ICC3P
8
8
mA
3
BURST OPERATING CURRENT
tck = min.,
Read command cycling
ICC4
x4
x8
x16
60
70
100
40
50
70
mA
mA
mA
3,4
AUTO REFRESH CURRENT
tck = min.,
Auto Refresh command cycling
ICC5
130
90
mA
3
SELF REFRESH CURRENT
Self Refresh Mode, CKE=0.2V
standard version
ICC6
1
1
mA
μ
A
3
L-version
500
500
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB41256 | Wirewound Inductor; Inductor Type:Standard; Inductance:10nH; Inductance Tolerance:+/- 5 %; Current Rating:400mA; Series:CM160808; Package/Case:0603; Core Material:Alumina Ceramic; Leaded Process Compatible:No RoHS Compliant: No |
| HYB41256-10 | 262,144 BIT DYNAMIC RAM |
| HYB41256-12 | 262,144 BIT DYNAMIC RAM |
| HYB41256-15 | 262,144 BIT DYNAMIC RAM |
| HYB511000BJ-50 | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S64800AT-10 | 制造商:Siemens 功能描述:8M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54 |
| HYB39S64800AT-7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM |
| HYB39S64800AT-7.5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM |
| HYB39S64800AT-8 | 制造商:Infineon Technologies AG 功能描述: |
| HYB39S64800AT-8B | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:64 MBit Synchronous DRAM |
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