參數(shù)資料
型號(hào): HYB39S64800
廠商: SIEMENS AG
英文描述: 64 MBit Synchronous DRAM
中文描述: 64兆位同步DRAM
文件頁數(shù): 25/53頁
文件大小: 665K
代理商: HYB39S64800
HYB39S64400/800/160AT(L)
64MBit Synchronous DRAM
Semiconductor Group
25
5. Burst Write Operation
(Burst Length = 4, CAS latency = 2, 3)
T0
6.1 Write Interrupted by a Write
(Burst Length = 4, CAS latency = 2, 3)
COMMAND
NOP
WRITE A
NOP
NOP
NOP
NOP
NOP
NOP
DQ’s
DIN A0
DIN A1
DIN A2
DIN A3
NOP
CLK
T2
T1
T3
T4
T5
T6
T7
T8
Extra data is ignored after
termination of a Burst.
The first data element and the Write
are registered on the same clock edge.
don’t care
COMMAND
NOP
WRITE A
WRITE B
NOP
NOP
NOP
NOP
NOP
DQ’s
DIN A0
DIN B0
DIN B1
DIN B2
NOP
DIN B3
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
1 Clk Interval
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