參數(shù)資料
型號(hào)： HYB39S64800
廠商： SIEMENS AG
英文描述： 64 MBit Synchronous DRAM
中文描述： 64兆位同步DRAM
文件頁數(shù)： 14/53頁
文件大小： 665K
代理商： HYB39S64800
Semiconductor Group
14
HYB39S64400/800/160AT(L)
64MBit Synchronous DRAM
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70
°
C
Storage temperature range......................................................................................
– 55 to + 150
°
C
Input/output voltage .............................................................................................– 0.3 to Vdd+0.3 V
Power supply voltage VDD / VDDQ..........................................................................– 0.3 to + 4.6 V
Power Dissipation............................................. ..........................................................................1 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under
“
Absolute Maximum Ratings
”
may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
Recommended Operation and Characteristics for LV-TTL versions:
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD,
V
DDQ
= 3.3 V
±
0.3 V
Notes:
1. All voltages are referenced to VSS.
2. Vih may overshoot to Vdd + 2.0 V for pulse width of < 4ns with 3.3V. Vil may undershoot to
-2.0 V for pulse width < 4.0 ns with 3.3V. Pulse width measured at 50% points with amplitude measured peak
to DC reference.
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit Notes
min.
max.
Input high voltage
V
I
H
V
I
L
V
OH
V
OL
I
I
(L)
2.0
Vdd+0.3
V
1, 2
Input low voltage
Output high voltage (
I
OUT
= – 4.0 mA)
Output low voltage (
I
OUT
= 4.0 mA)
Input leakage current, any input
(0 V <
V
I
N
< Vddq, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V <
V
OUT
<
Vdd
)
– 0.3
0.8
V
1, 2
2.4
–
V
–
0.4
V
μ
A
– 5
5
I
O(L)
– 5
5
μ
A
Parameter
Symbol
Values
Unit
min.
max.
Input capacitance
(CLK)
C
I
1
C
I
2
2.5
4.0
pF
Input capacitance
(A0-A12, BA0,BA1,RAS, CAS, WE, CS, CKE, DQM)
2.5
5.0
pF
Input / Output capacitance
(DQ)
C
I
O
4.0
6.5
pF
相關(guān)PDF資料
PDF描述
HYB41256 Wirewound Inductor; Inductor Type:Standard; Inductance:10nH; Inductance Tolerance:+/- 5 %; Current Rating:400mA; Series:CM160808; Package/Case:0603; Core Material:Alumina Ceramic; Leaded Process Compatible:No RoHS Compliant: No
HYB41256-10 262,144 BIT DYNAMIC RAM
HYB41256-12 262,144 BIT DYNAMIC RAM
HYB41256-15 262,144 BIT DYNAMIC RAM
HYB511000BJ-50 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB39S64800AT-10 制造商:Siemens 功能描述:8M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
HYB39S64800AT-7 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM
HYB39S64800AT-7.5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM
HYB39S64800AT-8 制造商:Infineon Technologies AG 功能描述:
HYB39S64800AT-8B 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:64 MBit Synchronous DRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*