參數(shù)資料
型號(hào): 28F640J5
英文描述: Dual-Slot, PCMCIA Analog Power Controller
中文描述: 28F640J5 -英特爾StrataFlash內(nèi)存技術(shù),32和64兆比特
文件頁數(shù): 8/53頁
文件大?。?/td> 306K
代理商: 28F640J5
INTEL
StrataFlash MEMORY TECHNOLOGY, 32 AND 64 MBIT
E
Table 1. Lead Descriptions
(Continued)
8
PRELIMINARY
Symbol
Type
Name and Function
BYTE#
INPUT
BYTE ENABLE:
BYTE# low places the device in x8 mode. All data is then input
or output on DQ
0
–DQ
7
, while DQ
8
–DQ
15
float. Address A
0
selects between the
high and low byte. BYTE# high places the device in x16 mode, and turns off the
A
0
input buffer. Address A
1
then becomes the lowest order address.
V
PEN
INPUT
ERASE / PROGRAM / BLOCK LOCK ENABLE:
For erasing array blocks,
programming data, or configuring lock-bits.
With V
PEN
V
PENLK
, memory contents cannot be altered.
V
CC
SUPPLY
DEVICE POWER SUPPLY:
With V
CC
V
LKO
, all write attempts to the flash
memory are inhibited.
V
CCQ
OUTPUT
BUFFER
SUPPLY
OUTPUT BUFFER POWER SUPPLY:
This voltage controls the device’s output
voltages. To obtain output voltages compatible with system data bus voltages,
connect V
CCQ
to the system supply voltage.
GND
SUPPLY
GROUND:
Do not float any ground pins.
NC
NO CONNECT:
Lead is not internally connected; it may be driven or floated.
相關(guān)PDF資料
PDF描述
28LV010RT2DB20 3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010RPDB20 3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010RPDB25 3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010RPDE20 3.3V 1 Megabit (128K x 8-Bit) EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F640L18 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
28F640L30 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel StrataFlash㈢ Wireless Memory with 3.0-Volt I/O (L30)
28F640P3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
28F640W30 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F650 制造商:Cinch Connectors 功能描述:1 Lug Terminal Strip