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參數(shù)資料
| 型號： | 28F640J5 |
| 英文描述： | Dual-Slot, PCMCIA Analog Power Controller |
| 中文描述： | 28F640J5 -英特爾StrataFlash內(nèi)存技術(shù)，32和64兆比特 |
| 文件頁數(shù)： | 1/53頁 |
| 文件大?。?/td> | 306K |
| 代理商： | 28F640J5 |
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E
PRELIMINARY
July 1998
Order Number: 290606-006
n
High-Density Symmetrically-Blocked
Architecture
64 128-Kbyte Erase Blocks (64 M)
32 128-Kbyte Erase Blocks (32 M)
n
4.5 V
–5.5 V V
CC
Operation
2.7 V–3.6 V and 4.5 V–5.5 V I/O
Capable
n
Configurable x8 or x16 I/O
n
100 ns Read Access Time (32 M)
150 ns Read Access Time (64 M)
n
Enhanced Data Protection Features
Absolute Protection with
V
PEN
= GND
Flexible Block Locking
Block Erase/Program Lockout
during Power Transitions
n
Industry-Standard Packaging
μBGA* Package (64 M), SSOP and
TSOP Packages (32 M)
n
Cross-Compatible Command Support
Intel Basic Command Set
Common Flash Interface
Scaleable Command Set
n
32-Byte Write Buffer
6.3 μs per Byte Effective
Programming Time
n
6,400,000 Total Erase Cycles (64 M)
3,200,000 Total Erase Cycles (32 M)
100,000 Erase Cycles per Block
n
Automation Suspend Options
Block Erase Suspend to Read
Block Erase Suspend to Program
n
System Performance Enhancements
STS Status Output
n
Expanded Temperature Operation
–20 °C to +70 °C
n
Intel
StrataFlash Memory Flash
Technology
Capitalizing on two-bit-per-cell technology, Intel StrataFlash memory products provide 2X the bits in 1X
the space. Offered in 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory devices
are the first to bring reliable, two-bit-per-cell storage technology to the flash market.
Intel StrataFlash memory benefits include: more density in less space, lowest cost-per-bit NOR devices,
support for code and data storage, and easy migration to future devices.
Using the same NOR-based ETOX technology as Intel’s one-bit-per-cell products, Intel StrataFlash
memory
devices take advantage of 400 million units of manufacturing experience since 1988. As a result,
Intel StrataFlash components are ideal for code or data applications where high density and low cost are
required. Examples include networking, telecommunications, audio recording, and digital imaging.
By applying FlashFile memory family pinouts, Intel StrataFlash memory components allow easy design
migrations from existing 28F016SA/SV, 28F032SA, and Word-Wide FlashFile memory devices (28F160S5
and 28F320S5).
Intel StrataFlash memory components deliver a new generation of forward-compatible software support. By
using the Common Flash Interface (CFI) and the Scaleable Command Set (SCS), customers can take
advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.
Manufactured on Intel’s 0.4 micron ETOX V process technology, Intel StrataFlash memory provides the
highest levels of quality and reliability.
32 AND 64 MBIT
28F320J5 and 28F640J5
相關(guān)PDF資料 |
PDF描述 |
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| 28LV010RT2DB20 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RPDB20 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RPDB25 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RPDE20 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F640L18 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory |
| 28F640L30 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel StrataFlash㈢ Wireless Memory with 3.0-Volt I/O (L30) |
| 28F640P3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| 28F640W30 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F650 | 制造商:Cinch Connectors 功能描述:1 Lug Terminal Strip |
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