參數(shù)資料
型號(hào): W942504CH-7
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 64M X 4 DDR DRAM, 0.75 ns, PDSO66
封裝: 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
文件頁數(shù): 6/45頁
文件大小: 1261K
代理商: W942504CH-7
W942504CH
- 14 -
Function Truth Table
(Note 1)
CURRENT
STATE
CS RAS
CAS WE
ADDRESS
COMMAND
ACTION
NOTES
H
X
DSL
Nop
L
H
X
NOP/BST
Nop
L
H
L
H
BS, CA, A10
READ/READA
ILLEGAL
3
L
H
L
BS, CA, A10
WRIT/WRITA
ILLEGAL
3
L
H
BS, RA
ACT
Row activating
L
H
L
BS, A10
PRE/PREA
Nop
L
H
X
AREF/SELF
Refresh or Self refresh
2
Idle
L
Op-Code
MRS/EMRS
Mode register accessing
2
H
X
DSL
Nop
L
H
X
NOP/BST
Nop
L
H
L
H
BS, CA, A10
READ/READAA
Begin read: Determine AP
4
L
H
L
BS, CA, A10
WRIT/WRITA
Begin write: Determine AP
4
L
H
BS, RA
ACT
ILLEGAL
3
L
H
L
BS, A10
PRE/PREA
Precharge
5
L
H
X
AREF/SELF
ILLEGAL
Row Active
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
Continue burst to end
L
H
X
NOP
Continue burst to end
L
H
L
X
BST
Burst stop
L
H
L
H
BS, CA, A10
READ/READA
Term burst, new read: Determine AP
6
L
H
L
BS, CA, A10
WRIT/WRITA
ILLEGAL
L
H
BS, RA
ACT
ILLEGAL
3
L
H
L
BS, A10
PRE/PREA
Term burst, precharging
L
H
X
AREF/SELF
ILLEGAL
Read
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
Continue burst to end
L
H
X
NOP
Continue burst to end
L
H
L
X
BST
ILLEGAL
L
H
L
H
BS, CA, A10
READ/READA
Term burst, start read: Determine AP
6, 7
L
H
L
BS, CA, A10
WRIT/WRITA
Term burst, start read: Determine AP
6
L
H
BS, RA
ACT
ILLEGAL
3
L
H
L
BS, A10
PRE/PREA
Term burst. precharging
8
L
H
X
AREF/SELF
ILLEGAL
Write
L
Op-Code
MRS/EMRS
ILLEGAL
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