參數(shù)資料
型號(hào): SM320F28335GHHAEP
廠商: Texas Instruments
文件頁數(shù): 65/167頁
文件大小: 0K
描述: IC DIGITAL SIGNAL CTLR 179-BGA
產(chǎn)品培訓(xùn)模塊: ControlSUITE
Motor Signal Chain Overview
TPS75005 Single IC Power for C2000 MCU
標(biāo)準(zhǔn)包裝: 189
系列: TMS320F28x3x Delfino™, C2000™
核心處理器: C28x
芯體尺寸: 32-位
速度: 150MHz
連通性: CAN,EBI/EMI,I²C,McBSP,SCI,SPI,UART/USART
外圍設(shè)備: DMA,POR,PWM,WDT
輸入/輸出數(shù): 88
程序存儲(chǔ)器容量: 512KB(256K x 16)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 34K x 16
電壓 - 電源 (Vcc/Vdd): 1.805 V ~ 1.995 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 16x12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 179-LFBGA
包裝: 托盤
產(chǎn)品目錄頁面: 718 (CN2011-ZH PDF)
其它名稱: 296-25243
Bit 0
Bit(n-1)
(n-2)
(n-3)
(n-4)
Bit 0
Bit(n-1)
(n-2)
(n-3)
(n-4)
CLKX
FSX
DX
DR
M54
M58
M56
M53
M55
M59
M57
LSB
MSB
M60
M61
SPRS581D – JUNE 2009 – REVISED MAY 2012
For all SPI slave modes, CLKX must be a minimum of 8 CLKG cycles. Also CLKG should be LSPCLK/2
by setting CLKSM = CLKGDV = 1. With maximum LSPCLK speed of 75 MHz, CLKX maximum frequency
is LSPCLK/16 , that is 4.6875 MHz and P = 13.3 ns.
Table 6-63. McBSP as SPI Master or Slave Switching Characteristics (CLKSTP = 11b, CLKXP = 1)(1)
NO.
PARAMETER
MASTER(2)
SLAVE
UNIT
MIN
MAX
MIN
MAX
M53
th(CKXH-FXL)
Hold time, FSX low after CLKX high
P
ns
M54
td(FXL-CKXL)
Delay time, FSX low to CLKX low
2P(1)
ns
M56
tdis(CKXH-DXHZ)
Disable time, DX high impedance following last data bit from
P + 6
7P + 6
ns
CLKX high
M57
td(FXL-DXV)
Delay time, FSX low to DX valid
6
4P + 6
ns
(1)
2P = 1/CLKG
(2)
C = CLKX low pulse width = P
D = CLKX high pulse width = P
Figure 6-41. McBSP Timing as SPI Master or Slave: CLKSTP = 11b, CLKXP = 1
6.17 Flash Timing
Table 6-64. Flash Endurance for A and S Temperature Material(1)
MIN
TYP
MAX
UNIT
Nf
Flash endurance for the array (write/erase cycles)
0°C to 85°C (ambient)
100
1000
cycles
NOTP
OTP endurance for the array (write cycles)
0°C to 85°C (ambient)
1
write
(1)
Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
Table 6-65. Flash Endurance for Q Temperature Material(1)
MIN
TYP
MAX
UNIT
Nf
Flash endurance for the array (write/erase cycles)
– 40°C to 125°C (ambient)
100
1000
cycles
NOTP
OTP endurance for the array (write cycles)
– 40°C to 125°C (ambient)
1
write
(1)
Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
Table 6-66. Flash Parameters at 150-MHz SYSCLKOUT
TEST
PARAMETER
MIN
TYP
MAX
UNIT
CONDITIONS
Program Time
16-Bit Word
50
μs
32K Sector
1000
ms
16K Sector
500
ms
Erase Time
32K Sector
11
s
16K Sector
11
s
Copyright 2009–2012, Texas Instruments Incorporated
Electrical Specifications
157
Product Folder Link(s): SM320F28335-EP
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