參數(shù)資料
型號: PC28F640J3F75A
元件分類: PROM
英文描述: 4M X 16 FLASH 2.7V PROM, PBGA64
封裝: LEAD FREE, BGA-64
文件頁數(shù): 59/66頁
文件大?。?/td> 740K
代理商: PC28F640J3F75A
Numonyx Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Datasheet
March 2010
62
208032-02
13.7
Primary-Vendor Specific Extended Query Table
Certain flash features and commands are optional. The Primary Vendor-Specific
Extended Query table specifies this and other similar information.
2Dh
4
Erase Block Region 1 Information
2D:
bits 0–15 = y, y+1 = number of identical-size erase blocks
2E:
bits 16–31 = z, region erase block(s) size are z x 256 bytes
2F:
30:
Notes:
1.
Compatible with J3 130nm device (32 bytes). J3 65 nm SBC device supports up to maximum 256 words (x16 mode)/
256 bytes (x8 mode) buffer write.
Table 42: Device Geometry: Address Codes
Address
32 Mbit
64 Mbit
128 Mbit
27:
--16--17--18
28:
--02--02--02
29:
--00--00--00
2A:
--05--05--05
2B:
--00--00--00
2C:
--01--01--01
2D:
--1F
--3F
--7F
2E:
--00--00--00
2F:
--00--00--00
30:
--02--02--02
Table 41: Device Geometry Definition (Sheet 2 of 2)
Offset
Length
Description
Code See Table Below
Table 43: Primary Vendor-Specific Extended Query (Sheet 1 of 2)
Offset(1)
P = 31h
Length
Description
(Optional Flash Features and Commands)
Add.
Hex
Code
Value
(P+0)h
3
Primary extended query table
31:
--50
“P”
(P+1)h
Unique ASCII string “PRI”
32:
--52
“R”
(P+2)h
33:
--49
“I”
(P+3)h
1
Major version number, ASCII
34:
--31
“1”
(P+4)h
1
Minor version number, ASCII
35:
--31
“1”
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