- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299624 > PC28F640J3F75A 4M X 16 FLASH 2.7V PROM, PBGA64 PDF資料下載
參數(shù)資料
| 型號： | PC28F640J3F75A |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 2.7V PROM, PBGA64 |
| 封裝： | LEAD FREE, BGA-64 |
| 文件頁數(shù)： | 15/66頁 |
| 文件大?。?/td> | 740K |
| 代理商： | PC28F640J3F75A |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁當(dāng)前第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁
Numonyx Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Datasheet
March 2010
22
208032-02
6.2
DC Voltage specifications
6.3
Capacitance
Notes:
1.
Sampled, not 100% tested.
2.
TA = -40 °C to +85 °C, VCC= VCCQ= 0 to 3.6 V.
Table 8:
DC Voltage Characteristics
VCCQ
2.7 - 3.6 V
Test Conditions
Notes
VCC
2.7 - 3.6 V
Symbol
Parameter
Min
Max
Unit
VIL
Input Low Voltage
–0.5
0.8
V
—
2, 5, 6
VIH
Input High Voltage
2.0
VCCQ + 0.5
V
—
2, 5, 6
VOL
Output Low Voltage
—0.4
V
VCC = VCCMin
VCCQ = VCCQ Min
IOL = 2 mA
1, 2
—0.2
V
VCC = VCCMin
VCCQ = VCCQ Min
IOL = 100 A
VOH
Output High Voltage
0.85 × VCCQ
—V
VCC = VCCMIN
VCCQ = VCCQ Min
IOH = –2.5 mA
1, 2
VCCQ – 0.2
—
V
VCC = VCCMIN
VCCQ = VCCQ Min
IOH = –100 A
VPENLK
VPEN Lockout during Program,
Erase and Lock-Bit Operations
—2.2
V
—
2, 3
VPENH
VPEN during Block Erase, Program,
or Lock-Bit Operations
2.7
3.6
V
—
3
VLKO
VCC Lockout Voltage
—
2.0
V
—
4
Notes:
1.
Includes STS.
2.
Sampled, not 100% tested.
3.
Block erases, programming, and lock-bit configurations are inhibited when VPEN ≤ VPENLK, and not guaranteed in the
range between VPENLK (max) and VPENH (min), and above VPENH (max).
4.
Block erases, programming, and lock-bit configurations are inhibited when VCC < VLKO, and not guaranteed in the range
between VLKO (min) and VCC (min), and above VCC (max).
5.
Includes all operational modes of the device.
6.
Input/Output signals can undershoot to -1.0V referenced to VSS and can overshoot to VCCQ + 1.0V for duration of 2ns or
less, the VCCQ valid range is referenced to VSS.
Table 9:
Capacitance
Symbol
Parameter1
Type
Max
Unit
Condition2
CIN
Input Capacitance
67
pF
VIN = 0.0 V
COUT
Output Capacitance
45
pF
VOUT = 0.0 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PC612B | 64 CONTACT(S), MALE, RIGHT ANGLE TWO PART EURO CONNECTOR, SOLDER |
| PC612B/2 | 32 CONTACT(S), MALE, RIGHT ANGLE TWO PART EURO CONNECTOR, SOLDER |
| PC612C | 96 CONTACT(S), MALE, RIGHT ANGLE TWO PART EURO CONNECTOR, SOLDER |
| PC612C/2 | 48 CONTACT(S), MALE, RIGHT ANGLE TWO PART EURO CONNECTOR, SOLDER |
| PC612D | 32 CONTACT(S), MALE, RIGHT ANGLE TWO PART EURO CONNECTOR, SOLDER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PC28F640J3F75B | 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Tape and Reel |
| PC28F640J3F75B TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 75NS TBGA |
| PC28F640J3F75D | 制造商:Micron Technology Inc 功能描述:NUMONYX EMBEDDED FLASH MEMORY (J3 65NM) SINGLE BIT PER CELL (SBC) 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M/4M x 8bit/16bit 75ns 64-Pin EBGA T/R 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Tape and Reel 制造商:Micron Technology 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M/4M x 8bit/16bit 75ns 64-Pin EBGA T/R 制造商:Micron Technology 功能描述:NUMONYX EMBEDDED FLASH MEMORY (J3 65NM) SINGLE BIT PER CELL (SBC) |
| PC28F640J3F75E | 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays |
| PC28F640P30B85 | 制造商:Intel 功能描述:MM#873919 64MB FLASH SOLD->NUM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。