參數(shù)資料
型號： PC28F640J3F75A
元件分類： PROM
英文描述： 4M X 16 FLASH 2.7V PROM, PBGA64
封裝： LEAD FREE, BGA-64
文件頁數(shù)： 11/66頁
文件大?。?/td> 740K
代理商： PC28F640J3F75A
March 2010
Datasheet
208032-02
19
Numonyx Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
5.0
Maximum Ratings and Operating Conditions
5.1
Absolute Maximum Ratings
Warning:
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent
damage. These are stress ratings only.
5.2
Operating Conditions
Warning:
Operations beyond the “Operating Conditions” is not recommended and extended
exposure beyond the “Operating Conditions” may affect device reliability.
5.3
Power-Up/Down
This section provides an overview of system level considerations with regards to the
flash device. It includes a brief description of power-up/down sequence and decoupling
design considerations.
5.3.1
Power-Up/Down Sequence
To prevent conditions that could result in spurious program or erase operations, the
power-up/power-down sequence shown in Table 6 is recommended. For DC voltage
characteristics refer to Table 8. Note that each power supply must reach its minimum
voltage range before applying/removing the next supply voltage.
NOTICE: This document contains information available at the time of its release. The specifications are subject to change without
notice. Verify with your local Numonyx sales office that you have the latest datasheet before finalizing a design.
Table 4:
Absolute Maximum Ratings
Parameter
Min
Max
Unit
Notes
Temperature under Bias Expanded (TA, Ambient)
–40
+85
°C
—
Storage Temperature
–65
+125
°C
—
VCC Voltage
–2.0
+5.6
V
2
VCCQ Voltage
–2.0
+5.6
V
2
Voltage on any input/output signal (except VCC, VCCQ)
–2.0
VCCQ (max) + 2.0
V
1
ISH Output Short Circuit Current
—
100
mA
3
Notes:
1.
Voltage is referenced to VSS. During infrequent non-periodic transitions, the voltage potential between VSS and input/
output pins may undershoot to –2.0 V for periods < 20 ns or overshoot to VCCQ (max) + 2.0 V for periods < 20 ns.
2.
During infrequent non-periodic transitions, the voltage potential between VCC and the supplies may undershoot to –2.0
V for periods < 20 ns or VSUPPLY (max) + 2.0 V for periods < 20 ns.
3.
Output shorted for less than one second. No more than one output pin/ball can be shorted at a time.
Table 5:
Temperature and VCC Operating Condition
Symbol
Parameter
Min
Max
Unit
Test Condition
TA
Operating Temperature
-40.0
+85
°C
Ambient Temperature
VCC
VCC Supply Voltage
2.70
3.6
V
—
VCCQ
VCCQ Supply Voltage
2.70
3.6
V
—
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PC28F640J3F75B 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Tape and Reel
PC28F640J3F75B TR 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 75NS TBGA
PC28F640J3F75D 制造商:Micron Technology Inc 功能描述:NUMONYX EMBEDDED FLASH MEMORY (J3 65NM) SINGLE BIT PER CELL (SBC) 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M/4M x 8bit/16bit 75ns 64-Pin EBGA T/R 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Tape and Reel 制造商:Micron Technology 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M/4M x 8bit/16bit 75ns 64-Pin EBGA T/R 制造商:Micron Technology 功能描述:NUMONYX EMBEDDED FLASH MEMORY (J3 65NM) SINGLE BIT PER CELL (SBC)
PC28F640J3F75E 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays
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