參數(shù)資料
型號(hào): PC28F640J3F75A
元件分類: PROM
英文描述: 4M X 16 FLASH 2.7V PROM, PBGA64
封裝: LEAD FREE, BGA-64
文件頁(yè)數(shù): 13/66頁(yè)
文件大?。?/td> 740K
代理商: PC28F640J3F75A
Numonyx Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Datasheet
March 2010
20
208032-02
Note:
1.
Power supplies connected or sequenced together.
Device inputs must not be driven until all supply voltages reach their minimum range.
RP# should be low during power transitions.
5.3.2
Power Supply Decoupling
When the device is enabled, many internal conditions change. Circuits are energized,
charge pumps are switched on, and internal voltage nodes are ramped. All of this
internal activities produce transient signals. The magnitude of the transient signals
depends on the device and system loading. To minimize the effect of these transient
signals, a 0.1 F ceramic capacitor is required across each VCC/VSS and VCCQ signal.
Capacitors should be placed as close as possible to device connections.
Additionally, for every eight flash devices, a 4.7 F electrolytic capacitor should be
placed between VCC and VSS at the power supply connection. This 4.7 F capacitor
should help overcome voltage slumps caused by PCB trace inductance.
5.4
Reset
By holding the flash device in reset during power-up and power-down transitions,
invalid bus conditions may be masked. The flash device enters reset mode when RP# is
driven low. In reset, internal flash circuitry is disabled and outputs are placed in a high-
impedance state. After return from reset, a certain amount of time is required before
the flash device is able to perform normal operations. After return from reset, the flash
device defaults to asynchronous page mode. If RP# is driven low during a program or
erase operation, the program or erase operation will be aborted and the memory
contents at the aborted block or address are no longer valid. See Figure 12, “AC
Waveform for Reset Operation” on page 28 for detailed information regarding reset
timings.
Table 6:
Power-Up/Down Sequence
Power Supply
Voltage
Power-Up Sequence
Power-Down Sequence
VCC(min)
1st
1st(1)
Sequencing not
required(1)
3rd
2nd
2nd(1)
Sequencing not
required(1)
VCCQ(min)
2nd
2nd(1)
2nd
1st(1)
VPEN(min)
3rd
2nd
1st
相關(guān)PDF資料
PDF描述
PC612B 64 CONTACT(S), MALE, RIGHT ANGLE TWO PART EURO CONNECTOR, SOLDER
PC612B/2 32 CONTACT(S), MALE, RIGHT ANGLE TWO PART EURO CONNECTOR, SOLDER
PC612C 96 CONTACT(S), MALE, RIGHT ANGLE TWO PART EURO CONNECTOR, SOLDER
PC612C/2 48 CONTACT(S), MALE, RIGHT ANGLE TWO PART EURO CONNECTOR, SOLDER
PC612D 32 CONTACT(S), MALE, RIGHT ANGLE TWO PART EURO CONNECTOR, SOLDER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PC28F640J3F75B 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Tape and Reel
PC28F640J3F75B TR 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 75NS TBGA
PC28F640J3F75D 制造商:Micron Technology Inc 功能描述:NUMONYX EMBEDDED FLASH MEMORY (J3 65NM) SINGLE BIT PER CELL (SBC) 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M/4M x 8bit/16bit 75ns 64-Pin EBGA T/R 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Tape and Reel 制造商:Micron Technology 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M/4M x 8bit/16bit 75ns 64-Pin EBGA T/R 制造商:Micron Technology 功能描述:NUMONYX EMBEDDED FLASH MEMORY (J3 65NM) SINGLE BIT PER CELL (SBC)
PC28F640J3F75E 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays
PC28F640P30B85 制造商:Intel 功能描述:MM#873919 64MB FLASH SOLD->NUM