參數(shù)資料
型號(hào): PC28F640J3F75A
元件分類: PROM
英文描述: 4M X 16 FLASH 2.7V PROM, PBGA64
封裝: LEAD FREE, BGA-64
文件頁數(shù): 21/66頁
文件大小: 740K
代理商: PC28F640J3F75A
Numonyx Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Datasheet
March 2010
28
208032-02
7.2
Program, Erase, Block-Lock Specifications
7.3
Reset Specifications
Note:
STS is shown in its default mode (RY/BY#).
Table 13: Configuration Performance
#
Symbol
Parameter
Typ
Max
Unit
Notes
W200
tPROG/W
Program Time
Single word
40
175
s
1,2,3,4,6
W250
tPROG
Buffer Program Time
Aligned 16 Words BP Time (32Byte)
128
654
s
1,2,3,4,5,6
Aligned 256 Words BP Time (512Byte)
720
3600
s
1,2,3,4,5,6
W501
tERS/AB
Block Erase Time
1.0
4.0
sec
1,2,3,4,6
W650
tlks
Set Lock-Bit Time
50
60
s
1,2,3,4,6
W651
tlkc
Clear Block Lock-Bits Time
0.5
1
sec
1,2,3,4,6
W600
tSUSP/P
Program Suspend Latency Time to Read
15
20
s
1,2,3,6
W601
tSUSP/E
Erase Suspend Latency Time to Read
15
20
s
1,2,3,6
W602
tERS/SUSP
Erase to Suspend
500
s
1,7
W652
tSTS
STS Pulse Width Low Time
500
ns
1
W702
tBC/MB
blank check
Array Block
3.2
ms
Notes:
1.
Typical values measured at TA = +25 °C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
2.
These performance numbers are valid for all speed versions.
3.
Sampled but not 100% tested.
4.
Excludes system-level overhead.
5.
These values are valid when the buffer is full, and the start address is aligned.
6.
Max values are measured at worst case temperature, data pattern and VCC corner within 100K cycles. But for W650, W651,
W600 and W601, the Max value are expressed at +25 °C or -40 °C.
7.
W602 is the typical time between an initial block erase or erase resume command and then a subsequent erase suspend
command. Violating the specification repeatedly during any particular block erase may cause erase failures.
Figure 12: AC Waveform for Reset Operation
P3
P1
P2
P1
STS (R)
RP# (P)
Vcc
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