參數(shù)資料
型號： PC28F640J3F75A
元件分類： PROM
英文描述： 4M X 16 FLASH 2.7V PROM, PBGA64
封裝： LEAD FREE, BGA-64
文件頁數(shù)： 58/66頁
文件大?。?/td> 740K
代理商： PC28F640J3F75A
March 2010
Datasheet
208032-02
61
Numonyx Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
13.5
System Interface Information
The following device information can optimize system interface software.
13.6
Device Geometry Definition
This field provides critical details of the flash device geometry.
Table 40: System Interface Information
Offset
Length
Description
Add.
Hex
Code
Value
1Bh
1
VCC logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1B:
--27
2.7 V
1Ch
1
VCC logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1C:
--36
3.6 V
1Dh
1
VPP [programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1D:
--00
0.0 V
1Eh
1
VPP [programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1E:
--00
0.0 V
1Fh
1
“n” such that typical single word program time-out = 2n s
1F:
--06
64 s
20h
1
“n” such that typical max. buffer write time-out = 2n s
20:
--07 1
128 s 1
21h
1
“n” such that typical block erase time-out = 2n ms
21:
--0A
1 s
22h
1
“n” such that typical full chip erase time-out = 2n ms
22:
--00
NA
23h
1
“n” such that maximum word program time-out = 2n times typical
23:
--02
256 s
24h
1
“n” such that maximum buffer write time-out = 2n times typical
24:
--03
2048s
25h
1
“n” such that maximum block erase time-out = 2n times typical
25:
--02
4 s
26h
1
“n” such that maximum chip erase time-out = 2n times typical
26:
--00
NA
Notes:
1.
The value is 32 Bytes buffer write typical time out
Table 41: Device Geometry Definition (Sheet 1 of 2)
Offset
Length
Description
Code See Table Below
27h
1
“n” such that device size = 2n in number of bytes
27:
28h
2
Flash device interface: x8 async x16 async x8/x16 async
28:
--02
x8/
x16
28:00,29:00 28:01,29:00 28:02,29:00
29:
--00
2Ah
2
“n” such that maximum number of bytes in write buffer = 2n
2A:
--05 1
32 1
2B:
--00
2Ch
1
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions with one or more
contiguous same-size erase blocks
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
2C:
--01
1
Notes:
1.
The value is 32 Bytes buffer write typical time out
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相關代理商/技術參數(shù)
參數(shù)描述
PC28F640J3F75B 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Tape and Reel
PC28F640J3F75B TR 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 75NS TBGA
PC28F640J3F75D 制造商:Micron Technology Inc 功能描述:NUMONYX EMBEDDED FLASH MEMORY (J3 65NM) SINGLE BIT PER CELL (SBC) 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M/4M x 8bit/16bit 75ns 64-Pin EBGA T/R 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Tape and Reel 制造商:Micron Technology 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M/4M x 8bit/16bit 75ns 64-Pin EBGA T/R 制造商:Micron Technology 功能描述:NUMONYX EMBEDDED FLASH MEMORY (J3 65NM) SINGLE BIT PER CELL (SBC)
PC28F640J3F75E 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays
PC28F640P30B85 制造商:Intel 功能描述:MM#873919 64MB FLASH SOLD->NUM
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