參數(shù)資料
型號(hào): PC28F640J3F75A
元件分類: PROM
英文描述: 4M X 16 FLASH 2.7V PROM, PBGA64
封裝: LEAD FREE, BGA-64
文件頁(yè)數(shù): 18/66頁(yè)
文件大?。?/td> 740K
代理商: PC28F640J3F75A
March 2010
Datasheet
208032-02
25
Numonyx Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Notes:
1.
CEX low is defined as the combination of pins CE0, CE1, and CE2 that enable the device. CEX high is defined as the
combination of pins CE0, CE1, and CE2 that disable the device (see
2.
When reading the flash array a faster tGLQV (R16) applies. For non-array reads, R4 applies (i.e., Status Register reads,
query reads, or device identifier reads).
Notes:
1.
CEX low is defined as the combination of pins CE0, CE1, and CE2 that enable the device. CEX high is defined as the
combination of pins CE0, CE1, and CE2 that disable the device (see
2.
In this diagram, BYTE# is asserted high.
Figure 8: Single-Word Asynchronous Read Waveform
Address [A]
R2
R1
R3
R4
R7
R6
R5
CEx [E]
OE # [G]
WE# [W]
DQ[15:0] [Q]
BYTE# [F]
RP# [P ]
R11
R12
R8
R9
R10
R13
Figure 9: 8-Word Asynchronous Page Mode Read
A[MAX :4] [A]
000
111
1
2
8
7
R2
R1
R3
R4
R7
R6
R5
R10
R15
R10
R9
R8
A[3:1] [A]
CEx [E]
OE # [G]
WE# [W]
DQ[15:0] [Q]
RP# [P]
BYTE # [F]
001
110
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