參數(shù)資料
型號: MT47H128M8HQ-187ELAT:E
元件分類: DRAM
英文描述: 128M X 8 DDR DRAM, 0.35 ns, PBGA60
封裝: 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60
文件頁數(shù): 122/133頁
文件大?。?/td> 9170K
10. Issue two or more REFRESH commands.
11. Issue a LOAD MODE command to the MR with LOW to A8 to initialize device operation
(that is, to program operating parameters without resetting the DLL). To access the MR,
set BA0 and BA1 LOW; remaining MR bits must be set to desired settings. Mode Register
(MR) (page 75) for all MR requirements.
12. Issue a LOAD MODE command to the EMR to enable OCD default by setting bits E7, E8,
and E9 to “1,” and then setting all other desired parameters. To access the EMR, set BA0
LOW and BA1 HIGH (see Extended Mode Register (EMR) (page 80) for all EMR require-
ments.
13. Issue a LOAD MODE command to the EMR to enable OCD exit by setting bits E7, E8, and
E9 to “0,” and then setting all other desired parameters. To access the extended mode
registers, EMR, set BA0 LOW and BA1 HIGH for all EMR requirements.
14. The DDR2 SDRAM is now initialized and ready for normal operation 200 clock cycles af-
ter the DLL RESET at Tf0.
15. DM represents DM for the x4, x8 configurations and UDM, LDM for the x16 configura-
tion; DQS represents DQS, DQS#, UDQS, UDQS#, LDQS, LDQS#, RDQS, RDQS# for the
appropriate configuration (x4, x8, x16); DQ represents DQ0–DQ3 for x4, DQ–DQ7 for x8
and DQ0–DQ15 for x16.
16. A10 = PRECHARGE ALL, CODE = desired values for mode registers (bank addresses are
required to be decoded).
1Gb: x4, x8, x16 DDR2 SDRAM
Initialization
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. S 10/09 EN
89
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
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MT47H128M8HQ-25AT 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM
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