參數(shù)資料
型號: MT47H128M8HQ-187ELAT:E
元件分類: DRAM
英文描述: 128M X 8 DDR DRAM, 0.35 ns, PBGA60
封裝: 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60
文件頁數(shù): 116/133頁
文件大?。?/td> 9170K
Figure 38: READ Latency
DO
n + 3
DO
n + 2
DO
n + 1
CK
CK#
Command
DQ
DQS, DQS#
AL = 2
ACTIVE n
T0
T1
T2
Don’t Care
Transitioning Data
READ n
NOP
DO
n
T3
T4
T5
NOP
T6
NOP
T7
T8
NOP
CL = 3
RL = 5
tRCD (MIN)
NOP
Notes: 1. BL = 4.
2. Shown with nominal tAC, tDQSCK, and tDQSQ.
3. RL = AL + CL = 5.
Figure 39: WRITE Latency
CK
CK#
Command
DQ
DQS, DQS#
ACTIVE n
T0
T1
T2
Don’t Care
Transitioning Data
NOP
T3
T4
T5
NOP
T6
NOP
DI
n + 3
DI
n + 2
DI
n + 1
WL = AL + CL - 1 = 4
T7
NOP
DI
n
tRCD (MIN)
NOP
AL = 2
CL - 1 = 2
WRITE n
Notes: 1. BL = 4.
2. CL = 3.
3. WL = AL + CL - 1 = 4.
1Gb: x4, x8, x16 DDR2 SDRAM
Extended Mode Register (EMR)
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. S 10/09 EN
83
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
相關(guān)PDF資料
PDF描述
MT48LC2M32B1TG-7 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
MT48LC32M4A2P-7ELIT:G 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
MT55L256L18FT-12TR 256K X 18 ZBT SRAM, 9 ns, PQFP100
MT55L256L32FT-12 256K X 32 ZBT SRAM, 9 ns, PQFP100
MT55L512V18PF-6 512K X 18 ZBT SRAM, 3.5 ns, PBGA165
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT47H128M8HQ-25AT 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM
MT47H128M8HQ-25EAT 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM