參數(shù)資料
型號(hào): KAB04D100M-TLGP
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Multi-Chip Package MEMORY
中文描述: 多芯片封裝存儲(chǔ)器
文件頁數(shù): 69/72頁
文件大小: 1378K
代理商: KAB04D100M-TLGP
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 69 -
MCP MEMORY
SEC Only
TIMING WAVEFORM OF POWER UP(1)
(POWER UP(1))
1. After Vcc
U
reaches Vcc
U
(Min.)
following power application, wait 200
μ
s with CS
U
high and then toggle CS
U
low and commit Read Oper-
ation at least twice. Then you get into the normal operation.
2. Read operation should be executed by toggling CS
U
pin low.
3. The read operation must satisfy the specified tRC.
4. ZZ pin should be kept high during whole power up sequence.
(POWER UP(2))
1. After Vcc
U
reaches Vcc
U
(Min.)
following power application, wait 200
μ
s and wait another 300
μ
s with CS
U
high if you don’t want to com-
mit dummy read cycle. After total 500
μ
s wait, toggle CS
U
low, then you get into the normal mode.
2. ZZ pin should be kept high during whole power up sequence.
200
μ
s
Read Operation Twice
Vcc
U
ZZ
CS
U
Vcc
U
(Min)
200
μ
s
Vcc
U
ZZ
CS
U
300
μ
s
Vcc
U
(Min)
TIMING WAVEFORM OF POWER UP(2)
(No Dummy Cycle)
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KAB04D100M-TNGP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY
KAB-1 功能描述:保險(xiǎn)絲 TRON RECTIFIER FUSE RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險(xiǎn)絲類型:Fast Acting 保險(xiǎn)絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風(fēng)格: 端接類型:SMD/SMT 系列:485
KAB-1/2 制造商:COOPER BUSSMANN 功能描述:TRON RECTIFIER FUSE
KAB-10 功能描述:保險(xiǎn)絲 10A RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險(xiǎn)絲類型:Fast Acting 保險(xiǎn)絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風(fēng)格: 端接類型:SMD/SMT 系列:485
KAB-100 制造商:Cooper Bussmann 功能描述: