參數(shù)資料
型號: KAB04D100M-TLGP
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Multi-Chip Package MEMORY
中文描述: 多芯片封裝存儲器
文件頁數(shù): 56/72頁
文件大小: 1378K
代理商: KAB04D100M-TLGP
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 56 -
MCP MEMORY
SEC Only
Toggle Bit During Internal Routine Operation
NOR Flash SWITCHING WAVEFORMS
t
DH
CE
R
Address*
OE
DQ6/DQ2
WE
R/B
R
Data In
t
AHT
t
AHT
t
ASO
t
AS
t
CEPH
t
OEH2
t
OEPH
Status
Data
t
OE
Status
Data
Status
Data
Array Data Out
NOTE:
Address for the write operation must include a bank address (A20~A21) where the data is written.
DQ
6
WE
DQ
2
Enter
Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase
Resume
Erase
Erase Suspend
Read
Erase
Erase
Complete
Erase Suspend
Read
NOTE:
DQ2 is read from the erase-suspended block.
Toggle
DQ
2
and DQ
6
with OE or CE
R
Parameter
Symbol
70ns
80ns
Unit
Min
Max
Min
Max
Output Enable Access Time
t
OE
-
25
-
25
ns
OE Hold Time
t
OEH2
10
-
10
-
ns
Address Hold Time
t
AHT
0
-
0
-
ns
Address Setup
t
ASO
55
-
55
-
ns
Address Setup Time
t
AS
0
-
0
-
ns
Data Hold Time
t
DH
0
-
0
-
ns
CE
R
High during toggle bit polling
t
CEPH
20
-
20
-
ns
OE High during toggle bit polling
t
OEPH
20
-
20
-
ns
相關(guān)PDF資料
PDF描述
KAB04D100M-TNGP Multi-Chip Package MEMORY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KAB04D100M-TNGP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY
KAB-1 功能描述:保險絲 TRON RECTIFIER FUSE RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險絲類型:Fast Acting 保險絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風格: 端接類型:SMD/SMT 系列:485
KAB-1/2 制造商:COOPER BUSSMANN 功能描述:TRON RECTIFIER FUSE
KAB-10 功能描述:保險絲 10A RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險絲類型:Fast Acting 保險絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風格: 端接類型:SMD/SMT 系列:485
KAB-100 制造商:Cooper Bussmann 功能描述: