- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374310 > KAB04D100M-TLGP (SAMSUNG SEMICONDUCTOR CO. LTD.) Multi-Chip Package MEMORY PDF資料下載
參數(shù)資料
| 型號： | KAB04D100M-TLGP |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Multi-Chip Package MEMORY |
| 中文描述： | 多芯片封裝存儲器 |
| 文件頁數(shù)： | 32/72頁 |
| 文件大小： | 1378K |
| 代理商： | KAB04D100M-TLGP |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁當前第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 32 -
MCP MEMORY
SEC Only
NAND FLASH MEMORY OPERATION
PAGE READ
Upon initial device power up, the device status is initially Read1 command(00h) latched. This operation is also initiated by writing
00h to the command register along with three address cycles. Once the command is latched, it does not need to be written for the fol-
lowing page read operation. Two types of operation are available : random read, serial page read. The random read mode is enabled
when the page address is changed. The 264 words of data within the selected page are transferred to the data registers in less than
10
μ
s(tR). The system controller can detect the completion of this data transfer(tR) by analyzing the output of R/B pin. Once the data
in a page is loaded into the registers, they may be read out by sequential RE pulse of 50n period cycle. High to low transitions of the
RE clock take out the data from the selected column address up to the last column address.
Read1 and Read2 commands determine pointer which selects either main area or spare area. The spare area(256 to 263 words)
may be selectively accessed by writing the Read2 command. Addresses A
0
to A
2
set the starting address of spare area while
addresses A
3
to A
7
must be "L". To move the pointer back to the main area, Read1 command(00h) is needed. Figures 16 through
21 show typical sequence and timing for each read operation.
Figure 14,15 details the sequence.
Figure 14. Read1 Operation
Start Add.(3Cycle)
00h
Data Output(Sequential)
CE
CLE
ALE
R/B
F
WE
DQ
x
RE
t
R
相關PDF資料 |
PDF描述 |
|---|---|
| KAB04D100M-TNGP | Multi-Chip Package MEMORY |
| KAB01D100M | Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel |
| KAB02D100M-TLGP | Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel |
| KAB01D100M-TNGP | CONNECTOR ACCESSORY |
| KAB02D100M-TNGP | CONNECTOR ACCESSORY |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KAB04D100M-TNGP | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY |
| KAB-1 | 功能描述:保險絲 TRON RECTIFIER FUSE RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險絲類型:Fast Acting 保險絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風格: 端接類型:SMD/SMT 系列:485 |
| KAB-1/2 | 制造商:COOPER BUSSMANN 功能描述:TRON RECTIFIER FUSE |
| KAB-10 | 功能描述:保險絲 10A RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險絲類型:Fast Acting 保險絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風格: 端接類型:SMD/SMT 系列:485 |
| KAB-100 | 制造商:Cooper Bussmann 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。