- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374310 > KAB04D100M-TLGP (SAMSUNG SEMICONDUCTOR CO. LTD.) Multi-Chip Package MEMORY PDF資料下載
參數(shù)資料
| 型號： | KAB04D100M-TLGP |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Multi-Chip Package MEMORY |
| 中文描述： | 多芯片封裝存儲器 |
| 文件頁數(shù)： | 33/72頁 |
| 文件大?。?/td> | 1378K |
| 代理商： | KAB04D100M-TLGP |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁當前第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 33 -
MCP MEMORY
SEC Only
PAGE PROGRAM
The device is programmed basically on a page basis, but it allows multiple partial page program of one word or consecutive words up
to 264, in a single page program cycle. The number of consecutive partial page program operation within the same page without
intervening erase operation should not exceed 2 for main array and 3 for spare array. The addressing may be done in any random
order in a block. Page program cycle consists of a serial data loading(up to 264 words of data) into the page register, and program of
loaded data into the appropriate cell. Serial data loading can start in 2nd half array by moving pointer. About the pointer operation,
please refer to the attached technical notes. Serial data loading is executed by entering the Serial Data Input command(80h) and
three cycle address input and then serial data loading. The bytes except those to be programmed need not to be loaded. The Page
Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering 80h will not initiate
program process. The internal write controller automatically executes the algorithms and timings necessary for program and verifica-
tion, thereby freeing the CPU for other tasks. Once the program process starts, the Read Status Register command may be entered,
with RE and CE low, to read the status register. The CPU can detect the completion of a program cycle by monitoring the R/B out-
put, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are valid while programming
is in progress. When the Page Program is completed, the Write Status Bit(I/O 0) may be checked(Figure 16). The internal write veri-
fication detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Status
command mode until another valid command is written to the command register.
Figure 16 details the sequence.
Figure 16. Program & Read Status Operation
80h
DQ
x
R/B
F
Address & Data Input
DQ
0
Pass
10h
70h
Fail
t
PROG
Figure 15. Read2 Operation
50h
A
0
~ A
2
& A
9
~ A
23
Data Output(Sequential)
Spare Field
CE
CLE
ALE
R/B
F
WE
Data Field
Spare Field
Start Add.(3Cycle)
(A
3
~ A
7
:
"L")
DQ
x
RE
t
R
相關PDF資料 |
PDF描述 |
|---|---|
| KAB04D100M-TNGP | Multi-Chip Package MEMORY |
| KAB01D100M | Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel |
| KAB02D100M-TLGP | Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel |
| KAB01D100M-TNGP | CONNECTOR ACCESSORY |
| KAB02D100M-TNGP | CONNECTOR ACCESSORY |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KAB04D100M-TNGP | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY |
| KAB-1 | 功能描述:保險絲 TRON RECTIFIER FUSE RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險絲類型:Fast Acting 保險絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風格: 端接類型:SMD/SMT 系列:485 |
| KAB-1/2 | 制造商:COOPER BUSSMANN 功能描述:TRON RECTIFIER FUSE |
| KAB-10 | 功能描述:保險絲 10A RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險絲類型:Fast Acting 保險絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風格: 端接類型:SMD/SMT 系列:485 |
| KAB-100 | 制造商:Cooper Bussmann 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。