參數(shù)資料
型號： KAB04D100M-TLGP
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Multi-Chip Package MEMORY
中文描述： 多芯片封裝存儲器
文件頁數(shù)： 20/72頁
文件大?。?/td> 1378K
代理商： KAB04D100M-TLGP
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 20 -
MCP MEMORY
SEC Only
WE
555H/
AAAH
2AAH/
555H
555H/
AAAH
AAH
55H
80H
555H/
AAAH
Block Erase
Start
DQ15-DQ0
2AAH/
555H
Block
Address
AAH
55H
30H
R/B
R
WE
DQ15-DQ0
Figure 8. Erase Suspend/Resume Command Sequence
Erase Suspend / Resume
The Erase Suspend command interrupts the Block Erase to read or program data in a block that is not being erased. The Erase Sus-
pend command is only valid during the Block Erase operation including the time window of 50
μ
s. The Erase Suspend command is
not valid while the Chip Erase
or the Internal Program Routine sequence is running.
When the Erase Suspend command is written during a Block Erase operation, the device requires a maximum of 20
μ
s to suspend
the erase operation. But, when the Erase Suspend command is written during the block erase time window (50
μ
s) , the device imme-
diately terminates the block erase time window and suspends the erase operation.
After the erase operation has been suspended, the device is availble for reading or programming data in a block that is not being
erased. The system may also write the autoselect command sequence when the device is in the Erase Suspend mode.
When the Erase Resume command is executed, the Block Erase operation will resume. When the Erase Suspend or Erase Resume
command is executed, the addresses are in Don't Care state.
Figure 7. Block Erase Command Sequence
A21
～
A0(x16)/
A21A21
～
A-1(x8)
A21
～
A0(x16)/
A21
～
A-1(x8)
555H/
AAAH
Block
Address
AAH
30H
XXXH
Erase
Resume
XXXH
B0H
30H
Erase
Suspend
Block Erase
Start
Block Erase
Command Sequence
相關(guān)PDF資料
PDF描述
KAB04D100M-TNGP Multi-Chip Package MEMORY
KAB01D100M Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel
KAB02D100M-TLGP Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel
KAB01D100M-TNGP CONNECTOR ACCESSORY
KAB02D100M-TNGP CONNECTOR ACCESSORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KAB04D100M-TNGP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY
KAB-1 功能描述:保險絲 TRON RECTIFIER FUSE RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險絲類型:Fast Acting 保險絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風格: 端接類型:SMD/SMT 系列:485
KAB-1/2 制造商:COOPER BUSSMANN 功能描述:TRON RECTIFIER FUSE
KAB-10 功能描述:保險絲 10A RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險絲類型:Fast Acting 保險絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風格: 端接類型:SMD/SMT 系列:485
KAB-100 制造商:Cooper Bussmann 功能描述:
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